Crystal growth of β-Ga2O3 thin film by APMOVPE using TEGa and O2 gas

Shun Ukita; Kaita Nakamura; Takeyoshi Tajiri; Kazuo Uchida

Presentation information

Poster presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

[23a-P06-1~28] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

Fri. Sep 23, 2022 9:30 AM - 11:30 AM P06 (Arena)

9:30 AM - 11:30 AM

[23a-P06-1] Crystal growth of β-Ga₂O₃ thin film by APMOVPE using TEGa and O₂ gas

〇Shun Ukita¹, Kaita Nakamura¹, Takeyoshi Tajiri¹, Kazuo Uchida¹ (1.UEC)

Keywords:Ga2O3, MOVPE

« Previous in this session
Next in this session »

▲

Presentation information

[23a-P06-1~28] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

[23a-P06-1] Crystal growth of β-Ga2O3 thin film by APMOVPE using TEGa and O2 gas

[23a-P06-1] Crystal growth of β-Ga₂O₃ thin film by APMOVPE using TEGa and O₂ gas