[23a-P06-1~28] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

[23a-P06-27] Relation between propagation angle of dislocations in β-Ga₂O₃ (001) bulk wafer and their etch pit shapes

〇Sou Isaji¹, Issei Maeda¹, Naoya Ogawa¹, Ryo Kosaka¹, Noriyuki Hasuike¹, Toshiyuki Isshiki¹, Kenji Kobayashi², Yongzhao Yao³, Yukari Ishikawa³ (1.Kyoto Inst. Tech., 2.Hitach High-tech, 3.JFCC)

Keywords:dislocation, etch pit, beta-Gallium oxide (beta-Ga2O3)