[23a-P06-1~28] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

[23a-P06-28] Investigations on characteristic change after forming process in IGZO / GTO-ReRAMs

〇Yuji Miyato¹, Takayuki Hirose¹, Tetsuya Katagiri¹, Sota Mikami¹, Kei Kobayashi², Mutsumi Kimura¹ (1.Ryukoku Univ., 2.Kyoto Univ.)

Keywords:ReRAM, IGZO, AFM

In our IGZO or GTO-ReRAM, surface morphology on the top electrode was partially changed after forming process. To investigate the reason, we carried out local bias application to the thin oxide film in the ReRAM devices using AFM, and found the topography was locally changed like a bowl-shaped crater around the bias application point through the AFM tip in the both ReRAM cases. Whereas a depression was formed at the central area, a rim was formed at the surrounding area. The resistance was mainly decreased near the rim part.