3:30 PM - 3:45 PM
▼ [23p-A101-10] An H-shaped metamaterial-based MEMS device with a high mechanical resonant frequency for THz waves
Keywords:Metamaterials, THz waves, MEMS
To further develop terahertz (THz) technologies that are potential in the upcoming application field beyond-5G, active devices that dynamically manipulate the transmission of THz waves are researched by using reconfigurable metamaterials (MMs). In this study, based on our reported concept that realizing active modulations for THz waves with a high tuning speed by integrating an H-shaped MM (H-MM) with micro-electro-mechanical systems (MEMS) ohmic switches, we successfully fabricated the H-MM-based MEMS device by using the surface machining technique. The mechanical response and transmittance were evaluated by using a microsystem Analyzer MSA-400 and THz time-domain spectroscopy.
A 0.5-mm-thick quartz substrate was used. Leads that provide drive voltage were embedded under a 0.42-µm-thick SiO2 film to avoid electrical short-circuit; then a 2D gold H-MM was formed on the surface layer. Finally, a MEMS actuator array was formed to align the split-bar of the H-MM. The electromechanical frequency response of the MEMS cantilever array was measured with a drive voltage of 100 VAC + 0 VDC-offset in the air. The peak magnitude of the oscillation velocity was found at 0.53 MHz, which is the mechanical resonant frequency fm of the cantilever. The device at the off-state (i.e., no excitation voltage was applied) keeps a high transmittance of 0.8 for the working band of 0.45–0.75 THz waves as expected. To actively switch it from the off- to the on-state is the next work of this study. A part of this work was supported by JST, CREST Grant Number JPMJCR2102, Japan, and JSPS KAKENHI Grant Number JP22J11158.
A 0.5-mm-thick quartz substrate was used. Leads that provide drive voltage were embedded under a 0.42-µm-thick SiO2 film to avoid electrical short-circuit; then a 2D gold H-MM was formed on the surface layer. Finally, a MEMS actuator array was formed to align the split-bar of the H-MM. The electromechanical frequency response of the MEMS cantilever array was measured with a drive voltage of 100 VAC + 0 VDC-offset in the air. The peak magnitude of the oscillation velocity was found at 0.53 MHz, which is the mechanical resonant frequency fm of the cantilever. The device at the off-state (i.e., no excitation voltage was applied) keeps a high transmittance of 0.8 for the working band of 0.45–0.75 THz waves as expected. To actively switch it from the off- to the on-state is the next work of this study. A part of this work was supported by JST, CREST Grant Number JPMJCR2102, Japan, and JSPS KAKENHI Grant Number JP22J11158.