[23p-B103-1~13] 12.5 有機太陽電池

▼ [23p-B103-7] Neutral Beam Oxide Interfacial Layer for Reliable Silicon-Organic Back-Contact Solar Cell Applications

〇(D)Aditya Saha¹、Daisuke Ohori¹、Ryuji Oshima²、Takeyoshi Sugaya²、Kazuhiko Endo²、Takahiko Sasaki³、Keisuke Itoh⁴、Hidenori Okuzaki⁵、Seiji Samukawa^6,1,7 (1.IFS, Tohoku Univ.、2.AIST、3.IMR, Tohoku Univ.、4.ITIM、5.Yamanashi Univ.、6.NYCU、7.AIMR, Tohoku Univ.)

キーワード：PEDOT, Hybrid Solar Cell, Neutral Beam Fabrication

Among architectures of silicon-organic hybrid solar cells, the use of n-type Si as the absorber and PEDOT:PSS as the carrier selective contact is the most popular. However, devices with this configuration suffer from poor reliability and rapid performance degradation. Some key concerns are the degradation of the hole transport layer (HTL) through UV radiation, the porous morphology of the PEDOT:PSS layer and the quality of the silicon-PEDOT:PSS interface. We have already reported on the accelerated growth of an interfacial oxide in silicon coated with PEDOT:PSS. It was speculated that this was partially due to the multiple vacancies in the PEDOT:PSS. Recently, a PSS-free self-doped PEDOT (S-PEDOT) was shown to have higher conformity to nanostructures and lower number of cavities compared to PEDOT:PSS. This study demonstrates the use of a back-contact S-PEDOT and a stable passivating tunneling layer using Neutral Beam Oxidation (NBO) for a future hybrid solar cell design.