[23p-B201-1~12] 10.4 半導体・トポロジカル・超伝導・強相関スピントロニクス

▲ [23p-B201-12] Bias dependence of electron spin polarization in GaNAs quantum well-InAs quantum dot tunnel-coupled structures

〇Hiroto Kise¹、Soyoung Park¹、Satoshi Hiura¹、Junichi Takayama¹、Kazuhisa Sueoka¹、Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

キーワード：quantum dot, electric field effect, electron spin polarization