[23p-B201-1~12] 10.4 半導体・トポロジカル・超伝導・強相関スピントロニクス

△ [23p-B201-5] Giant spin-valve effect in oxide-based lateral nano-scale channel devices

〇(M2)遠藤 達朗¹、Tsuruoka Shun¹、Kaneta-Takada Shingo¹、Anh Le Duc¹、Tanaka Masaaki^1,2、Ohya Shinobu^1,2 (1.東大院工、2.東大院工CSRN)

キーワード：Spin valve、Oxide electronics、Half metal

Spin MOSFET is one of the devices proposed as post-Moore devices since it accommodates transistor and non-volatile memory within a single device structure, which is expected to operate at high speed with high endurance. Both perpendicular- and lateral-type structures have been studied for spin MOSFETs. Though the perpendicular approach achieved large magnetoresistance, it lacks the transistor capability, and the lateral structure still shows very small magnetoresistance. In this work, we exploited the half-metallic nature of the perovskite oxide, La_2/3Sr_1/3MnO₃, and fabricated nano-sized lateral spintronics devices with a very short (~30 nm) channel. In this device, we have achieved an extremely high magnetoresistance ratio of 115 %, the highest value ever reported for lateral spin-valve structures. This result highlights the potential of perovskite oxide material and nanostructure for spintronics devices.