[23p-B201-1~12] 10.4 半導体・トポロジカル・超伝導・強相関スピントロニクス

▲ [23p-B201-7] Estimation of spin drift velocity considering effective magnetic field
due to Rashba SOI in silicon spin MOSFET

〇Hajime Inoue¹、Masashi Shiraishi¹、Yuichiro Ando¹、Ryo Ohshima¹、Ei Shigematsu¹、Hayato Koike² (1.Kyoto Univ.、2.TDK corp.)

キーワード：Silicon, Rashba SOI, spin drift velocity

Si Spin MOSFET is expected to be available for spin-based reconfigurable logic circuits and non-volatile memory. However, there is still lack of understanding of some basic physical properties related to the gate voltage dependence of spin signals in a MOSFET. One of the physical properties is the Rashba spin-orbit interaction (SOI) at the Si/SiO₂ interface. In this study, we investigated the effect of the effective magnetic field due to the Rashba SOI in the system in view of drift velocity. We performed the Hanle-type spin precession measurements with varying V_g, and a local three-terminal measurement was used to estimate spin drift velocity. The estimated spin drift velocity in the two individual methods ; the conventional fitting function for the Hanle measurement considering the spin drift effect and calculation from carrier density of n-type Si conduction layer, is quite consistent at V_g = 10 V at which the effective magnetic field due to the Rashba SOI is negligibly small. The detail of how the Rashba field gives rise to estimation of the spin drift velocity with less reliability will be discussed in the presentation.