[23p-B203-1~13] 17.3 Layered materials

[23p-B203-13] Dielectric properties of atomic layered materials

〇Mina Maruyama¹, Susumu Okada¹ (1.Univ. of Tsukuba)

Keywords:atomic layered material, dielectric property

Using the density functional theory, we investigated the dielectric properties of bilayer hexagonal boron nitride (hBN) and MoS₂ in terms of interlayer stacking arrangement. Our calculation demonstrated that the dielectric properties strongly depend on the stacking arrangements and constituent elements. Polarization in a bilayer hBN with AB stacking causes the potential difference of 120 mV between upper and lower layers, while the polarization is absent for the hBN with twisted stacking.