[23p-B204-1~9] 13.7 Compound and power devices, process technology and characterization

△ [23p-B204-1] Transient temperature responce of GaN HEMT

〇Shunsuke Ito¹, Yutaka Taniguchi¹, Atsushi Tanaka², Tadatomo Suga³, Akio Wakejima¹ (1.Meikou Univ., 2.Nagoya Univ., 3.Meisei Univ.)

Keywords:semiconductor, gallium nitride (GaN)

GaN amplifiers for mobile base stations undergo large instantaneous changes in dissipation power. Along with the large change in dissipation power, the temperature of the GaN transistor also changes significantly. We analyzed the transient temperature variation characteristics for fast changing pulsed dissipation power and found that the temperature change does not follow the 10 kHz power change and the change from the temperature (steady state value) to the average value of the overall power is small.