[23p-B204-1~9] 13.7 Compound and power devices, process technology and characterization

[23p-B204-9] Room-temperature PL lifetime of state-of-the-art n-type GaN substrates and epilayers

〇Shigefusa Chichibu¹, Kohei Shima¹, Kazunobu Kojima¹, Akira Uedono², Shoji Ishibashi³, Hirotaka Watanabe⁴, Atsushi Tanaka⁴, Yoshio Honda⁴, Masayuki Imanishi⁵, Yusuke Mori⁵, Toshihide Nabatame⁶, Yoshihiro Irokawa⁶, Hiroshi Amano⁴, Yasuo Koide⁶ (1.IMRAM-Tohoku Univ., 2.Univ. of Tsukuba, 3.AIST, 4.Nagoya Univ., 5.Osaka Univ., 6.NIMS)

Keywords:semiconductor, Gallium nitride power device, Midgap recombination centers

Midgap recombination centers in n-GaN will be reviewed in accordance with the results obtained through MEX-GaN project (2016-2020).