[23p-C101-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

△ [23p-C101-10] Hole concentration reduction in CuI by Zn substitution and its mechanism

〇Masatake Tsuji¹, Soshi Iimura^1,2,3, Junghwan Kim^1,3, Hideo Hosono^1,2 (1.MCES Tokyo Tech., 2.NIMS, 3.PRESTO)

Keywords:Copper iodide, Carrier doping, Point defects

Copper iodide (CuI) is a promising p-type transparent semiconductor with excellent carrier mobility. However, the high hole concentration in conventionally fabricated CuI hinders its applicability to the channel layer of thin-film transistors and HTL materials in OLEDs. However, the high hole concentration hinders its application to channel layers in thin-film transistors and HTL materials in OLEDs. We show that the hole concentration can be reduced to 10¹⁴–10¹⁶ cm⁻³ by Zn substitution owing to the formation of Zn_Cu–V_Cu defect pairs and the simultaneous increase in the formation energy of the copper vacancy, rather than hole compensation by the doped electron generated by Zn²⁺ substitution into the Cu⁺ sites.