[23p-C101-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

▼ [23p-C101-8] Optical and Electronic Properties of the Type II Ge Clathrate Film and Effects of Si/Al Doping

〇Rahul Kumar¹, Shiori Kurita², Tun Naing Aye², Tamio Iida¹, Hitoe Habuchi¹, Fumitaka Ohashi³, Himanshu S. Jha³, Tetsuji Kume^2,3 (1.National Inst. of Technology, Gifu College, 2.Graduate School of Natural Science and Technology, Gifu Univ., 3.Faculty of Engineering, Gifu Univ.)

Keywords:Inorganic Clathrate, Thin film, Semiconducting Clathrates

Recently, we reported a synthesis method in which type-II Ge clathrate film was synthesized from amorphous Ge by depositing Na followed by thermal annealing in a vacuum chamber. Furthermore, Al doped and Si doped type II Ge clathrate films with various thickness were successively fabricated. The optical and electrical properties were systematically investigated and compared with the undoped type II Ge clathrate.