Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[22p-D316-1~16] 13.8 Optical properties and light-emitting devices

Tue. Mar 22, 2022 1:00 PM - 5:15 PM D316 (D316)

Yasushi Nanai(National Defense Academy), Jun Tatebayashi(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[22p-D316-1] Exploration of silicate-based phosphors by crystal-site engineering

〇Yasushi Sato¹, Koji Tomita², Masato Kakihana^3,4 (1.Okayama Univ. Sci., 2.Tokai Univ., 3.Osaka Univ., 4.Tohoku Univ.)

1:15 PM - 1:30 PM

[22p-D316-2] Machine Learning on Emission Peak Top of Eu²⁺-Activated Phosphors

〇Yukinori Koyama¹, Takashi Takeda¹, Naoto Hirosaki¹ (1.NIMS)

1:30 PM - 1:45 PM

△ [22p-D316-3] Search for Narrow-Band Phosphors Using Local Structure Similarity

〇Shota Takemura¹, Yukinori Koyama¹, Takayuki Nakanishi¹, Shiro Funahashi¹, Naoto Hirosaki¹, Hidekazu Ikeno², Takashi Takeda¹ (1.NIMS, 2.Osaka Pref. Univ.)

1:45 PM - 2:00 PM

▲ [22p-D316-4] Revisiting the Eu2+ emission in CaAlSiN3 (CASN) red phosphor by time-resolved spectroscopy

〇Jian Xu¹, Kohsei Takahashi¹, Takayuki Nakanishi¹, Naoto Hirosaki¹, Takashi Takeda¹ (1.NIMS)

2:00 PM - 2:15 PM

[22p-D316-5] Deep-Red to Near-Infrared Luminescence from Eu²⁺-Trapped Exciton State in YSiO₂N

〇Yuuki Kitagawa¹, Jumpei Ueda¹, Jian Xu², Takayuki Nakanishi², Takashi Takeda², Naoto Hirosaki², Setsuhisa Tanabe¹ (1.Kyoto Univ., 2.NIMS)

2:15 PM - 2:30 PM

△ [22p-D316-6] Model of persistent photoreduction via charge compensation defect in KSrPO₄:Eu

〇Masaya Tsuta^1,2, Susumu Nakamura², Ariyuki Kato¹ (1.NUT Univ., 2.NNCT)

2:30 PM - 2:45 PM

△ [22p-D316-7] The influence of Eu³⁺ site distribution for photoluminescence properties in Sr₂CaWO₆:Eu³⁺

〇(DC)Takahito Otsuka¹, Tomokatsu Hayakawa^1,2 (1.Nagoya Inst. Tech., 2.FRIMS)

3:00 PM - 3:15 PM

[22p-D316-8] [The 51st Young Scientist Presentation Award Speech] Demonstration of light-emitting diodes with ultra-stable emission wavelength using Tb-doped Al_xGa_1-xN

〇Ryota Komai¹, Shuhei Ichikawa^1,2, Hiromasa Hanzawa³, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Graduate School of Engineering, Osaka Univ., 2.Research Center for UHVEM, Osaka Univ., 3.Graduate School of Engineering Science, Osaka Univ.)

3:15 PM - 3:30 PM

▼ [22p-D316-9] Investigation of an additional point-like short-wavelength emission in InGaN red light-emitting diodes

〇(DC)Pavel Sergeyevich Kirilenko¹, Zhe Zhuang¹, Daisuke Iida¹, Martin Velazquez-Rizo¹, Kazuhiro Ohkawa¹ (1.King Abdullah Univ. of Science and Technology)

3:30 PM - 3:45 PM

▼ [22p-D316-10] Photoluminescence enhancement of InAs surface quantum dots by Al₂O₃ passivation

〇(DC)Hanif Mohammadi¹, Ronel Roca¹, Yuwei Zhang¹, Hyunju Lee¹, Naotaka Iwata¹, Yoshio Ohshita¹, Itaru Kamiya¹ (1.Toyota tech. inst.)

3:45 PM - 4:00 PM

[22p-D316-11] Investigation of device structure for the high power surface emitting quantum cascade laser

〇Rei Hashimoto¹, Tsutomu Kakuno¹, Kei Kaneko¹, Shinji Saito¹, Hirotaka Tanimura², Shigeyuki Takagi², Yunzhao Yao³, Naoki Ikeda³, Yoshimasa Sugimoto³, Takaaki Mano³, Takashi Kuroda³, Kazuaki Sakoda³ (1.Toshiba CMC, 2.Tokyo Technology Univ., 3.NIMS)

4:00 PM - 4:15 PM

[22p-D316-12] Operating characteristics for photonic crystal surface-emitting quantum cascade lasers with low symmetric pillar

〇Shinji Saito¹, Kei Kaneko¹, Rei Hashimoto¹, Tsutomu Kakuno¹, Hirotaka Tanimura², Shigeyuki takagi², Yuanzhao Yao³, Naoki Ikeda³, Yoshimasa Sugimoto³, Takaaki Mano³, Takashi Kuroda³, Kazuaki Sakoda³ (1.Toshiba Corp., 2.Tokyo Inst. Univ., 3.NIMS)

4:15 PM - 4:30 PM

[22p-D316-13] Design of quantum cascade lasers with high aluminum composition InAlAs barriers and high indium composition InGaAs wells by non-equilibrium Green's function method

〇(PC)Hirotaka Tanimura¹, Shigeyuki Takagi¹, Tsutomu Kakuno², Rei Hashimoto², Kei Kaneko², Shinji Saito² (1.Tokyo Univ. of Tech., 2.Toshiba)

4:30 PM - 4:45 PM

[22p-D316-14] Effect of Phosphorus Composition of barrier layers on Carrier Transport Properties in InGaAs/GaAsP Super Lattice Structures

〇Tetsuo Ikari¹, Ryo Furukawa¹, Naoki Yamamoto¹, Masakazu Sugiyama², Atsuhiko Fukuyama¹ (1.Univ. Miyazaki, 2.The Univ. Tokyo)

4:45 PM - 5:00 PM

[22p-D316-15] First-principles study on the stability of mixed halide perovskites CsPb(I_xBr_1-x)₃

〇(M1)Ami Tomita¹, Takashi Nakayama¹ (1.Chiba Univ.)

5:00 PM - 5:15 PM

[22p-D316-16] Room-temperature polariton formation and photoluminescence relaxation dynamics in a microcavity containing CdSe nanoplatelets

〇Masaru Oda¹, Hiroki Matsuo¹, Katsunosuke Nakaishi¹, Kazuaki Yamato¹, Hisao Kondo² (1.Kyushu inst. of tech., 2.Ehime Univ.)

Session information

[22p-D316-1~16] 13.8 Optical properties and light-emitting devices

[22p-D316-1] Exploration of silicate-based phosphors by crystal-site engineering

[22p-D316-2] Machine Learning on Emission Peak Top of Eu²⁺-Activated Phosphors

△ [22p-D316-3] Search for Narrow-Band Phosphors Using Local Structure Similarity

▲ [22p-D316-4] Revisiting the Eu2+ emission in CaAlSiN3 (CASN) red phosphor by time-resolved spectroscopy

[22p-D316-5] Deep-Red to Near-Infrared Luminescence from Eu²⁺-Trapped Exciton State in YSiO₂N

△ [22p-D316-6] Model of persistent photoreduction via charge compensation defect in KSrPO₄:Eu

△ [22p-D316-7] The influence of Eu³⁺ site distribution for photoluminescence properties in Sr₂CaWO₆:Eu³⁺

[22p-D316-8] [The 51st Young Scientist Presentation Award Speech] Demonstration of light-emitting diodes with ultra-stable emission wavelength using Tb-doped Al_xGa_1-xN

▼ [22p-D316-9] Investigation of an additional point-like short-wavelength emission in InGaN red light-emitting diodes

▼ [22p-D316-10] Photoluminescence enhancement of InAs surface quantum dots by Al₂O₃ passivation

[22p-D316-11] Investigation of device structure for the high power surface emitting quantum cascade laser

[22p-D316-12] Operating characteristics for photonic crystal surface-emitting quantum cascade lasers with low symmetric pillar

[22p-D316-13] Design of quantum cascade lasers with high aluminum composition InAlAs barriers and high indium composition InGaAs wells by non-equilibrium Green's function method

[22p-D316-14] Effect of Phosphorus Composition of barrier layers on Carrier Transport Properties in InGaAs/GaAsP Super Lattice Structures

[22p-D316-15] First-principles study on the stability of mixed halide perovskites CsPb(I_xBr_1-x)₃

[22p-D316-16] Room-temperature polariton formation and photoluminescence relaxation dynamics in a microcavity containing CdSe nanoplatelets

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Session information

[22p-D316-1~16] 13.8 Optical properties and light-emitting devices

△ [22p-D316-3] Search for Narrow-Band Phosphors Using Local Structure Similarity

▲ [22p-D316-4] Revisiting the Eu2+ emission in CaAlSiN3 (CASN) red phosphor by time-resolved spectroscopy

△ [22p-D316-6] Model of persistent photoreduction via charge compensation defect in KSrPO4:Eu

△ [22p-D316-7] The influence of Eu3+ site distribution for photoluminescence properties in Sr2CaWO6:Eu3+

▼ [22p-D316-9] Investigation of an additional point-like short-wavelength emission in InGaN red light-emitting diodes

▼ [22p-D316-10] Photoluminescence enhancement of InAs surface quantum dots by Al2O3 passivation

Authenticate

△ [22p-D316-6] Model of persistent photoreduction via charge compensation defect in KSrPO₄:Eu

△ [22p-D316-7] The influence of Eu³⁺ site distribution for photoluminescence properties in Sr₂CaWO₆:Eu³⁺

▼ [22p-D316-10] Photoluminescence enhancement of InAs surface quantum dots by Al₂O₃ passivation