Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[23a-E307-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Wed. Mar 23, 2022 9:00 AM - 12:00 PM E307 (E307)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[23a-E307-1] Single-electron tunneling in Si nano-transistors co-doped at high concentration

〇Tsutomu Kaneko¹, Taruna Teja Jupalli¹, Shumpei Miura¹, Kensuke Yamaguchi¹, Daniel Moraru¹ (1.Shizuoka Univ.)

9:15 AM - 9:30 AM

▼ [23a-E307-2] Study of single-electron tunneling in Si nano-transistors in different doping concentration regimes for room-temperature operation

〇(DC)Jupalli Taruna Teja^1,2, Ananta Debnath², Yukinori Ono^1,2, Daniel Moraru^1,2 (1.GSST, Shizuoka Univ., 2.Research Institute of Electronics, Shizuoka Univ.)

9:30 AM - 9:45 AM

△ [23a-E307-3] Single Electron Transport with Single Minimum Surface Acoustic Wave

〇(D)Shunsuke Ota^1,2, Junliangn Wang³, Hermann Edlbauer³, Baptiste Jadot³, Pierre-Andre Mortemousque^3,4, Aymeric Richard³, Yuma Okazaki², Shuji Nakamura², Arne Ludwig⁵, Andreas D. Wieck⁵, Matias Urdampilleta³, Tristan Meunier³, Tetsuo Kodera¹, Nobu-Hisa Kaneko², Shintaro Takada², Christopher Bauerle³ (1.Tokyo Tech., 2.AIST, 3.Inst. Neel, 4.UGA, 5.RUB)

9:45 AM - 10:00 AM

▲ [23a-E307-4] Stabilizing method of a double quantum dot towards long-term and stable spin-qubit operation

〇Sayyid Irsyadul Ibad¹, Hiroki Takahashi¹, Shimpei Nishiyama¹, Kimihiko Kato², Yongxun Liu², Shigenori Murakami², Takahiro Mori², Raisei Mizokuchi¹, Jun Yoneda¹, Tetsuo Kodera¹ (1.Tokyo Tech., 2.AIST)

10:00 AM - 10:15 AM

[23a-E307-5] Simulation of CMOS circuit and single-electron transistors for readout of spin qubits

〇Tetsufumi Tanamoto¹, Keiji Ono² (1.Teikyo Univ, 2.Riken)

10:30 AM - 10:45 AM

[23a-E307-6] Reducing the effects of crosstalk in RF reflectometry by using mixed-mode transmission

〇(M1)Masato Machida¹, Raisei Mizokuchi¹, Jun Yoneda¹, Takashi Tomura¹, Tetsuo Kodera¹ (1.Tokyo Institute of Technology)

10:45 AM - 11:00 AM

[23a-E307-7] Evaluating Charge Noise Spectrum of pMOS Si Quantum Dots

〇Kazuma Nakagoe¹, Hiroki Takahashi¹, Raisei Mizokuchi¹, Jun Yoneda¹, Tetsuo Kodera¹ (1.Tokyo Tech)

11:00 AM - 11:15 AM

[23a-E307-8] Non-equilibrium dynamics and charge noise in gate-controlled Si-MOS devices

〇Katsuya Sato¹, Satoru Miyamoto¹, Noritaka Usami¹ (1.Nagoya Univ.)

11:15 AM - 11:30 AM

[23a-E307-9] Enhancement of Tunneling Currents by Resonant States of SiGe Quantum Wells
in Si-pn Junctions

〇Sanghun Cho¹, Kimihiko Kato², Shota Iizuka², Takahiro Mori², Takashi Nakayama¹ (1.Chiba Univ., 2.AIST)

11:30 AM - 11:45 AM

▲ [23a-E307-10] Theoretical analysis on the effect of coupling between dopants and leads in Si nanodiodes for band-to-band tunneling enhancement

〇(PC)Chitra Pandy¹, Kensuke Yamaguchi², Yoichiro Neo¹, Hidenori Mimura¹, Daniel Moraru¹ (1.Research Institute of Electronics,Shizuoka Univ, 2.Graduate School of Integrated Science and Technology, Shizuoka Univ)

11:45 AM - 12:00 PM

[23a-E307-11] A Study on improvement of output characteristics of tunnel FET with p-n-i-n structure

〇Riku Fujii¹, Koki Endo¹, Yan Wu¹, Yoshihiro Takahashi¹ (1.Nihon Univ.)

Session information

[23a-E307-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[23a-E307-1] Single-electron tunneling in Si nano-transistors co-doped at high concentration

▼ [23a-E307-2] Study of single-electron tunneling in Si nano-transistors in different doping concentration regimes for room-temperature operation

△ [23a-E307-3] Single Electron Transport with Single Minimum Surface Acoustic Wave

▲ [23a-E307-4] Stabilizing method of a double quantum dot towards long-term and stable spin-qubit operation

[23a-E307-5] Simulation of CMOS circuit and single-electron transistors for readout of spin qubits

[23a-E307-6] Reducing the effects of crosstalk in RF reflectometry by using mixed-mode transmission

[23a-E307-7] Evaluating Charge Noise Spectrum of pMOS Si Quantum Dots

[23a-E307-8] Non-equilibrium dynamics and charge noise in gate-controlled Si-MOS devices

[23a-E307-9] Enhancement of Tunneling Currents by Resonant States of SiGe Quantum Wells
in Si-pn Junctions

▲ [23a-E307-10] Theoretical analysis on the effect of coupling between dopants and leads in Si nanodiodes for band-to-band tunneling enhancement

[23a-E307-11] A Study on improvement of output characteristics of tunnel FET with p-n-i-n structure

Authenticate

Session information

[23a-E307-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[23a-E307-1] Single-electron tunneling in Si nano-transistors co-doped at high concentration

▼ [23a-E307-2] Study of single-electron tunneling in Si nano-transistors in different doping concentration regimes for room-temperature operation

△ [23a-E307-3] Single Electron Transport with Single Minimum Surface Acoustic Wave

▲ [23a-E307-4] Stabilizing method of a double quantum dot towards long-term and stable spin-qubit operation

[23a-E307-5] Simulation of CMOS circuit and single-electron transistors for readout of spin qubits

[23a-E307-6] Reducing the effects of crosstalk in RF reflectometry by using mixed-mode transmission

[23a-E307-7] Evaluating Charge Noise Spectrum of pMOS Si Quantum Dots

[23a-E307-8] Non-equilibrium dynamics and charge noise in gate-controlled Si-MOS devices

[23a-E307-9] Enhancement of Tunneling Currents by Resonant States of SiGe Quantum Wellsin Si-pn Junctions

▲ [23a-E307-10] Theoretical analysis on the effect of coupling between dopants and leads in Si nanodiodes for band-to-band tunneling enhancement

[23a-E307-11] A Study on improvement of output characteristics of tunnel FET with p-n-i-n structure

Authenticate

[23a-E307-9] Enhancement of Tunneling Currents by Resonant States of SiGe Quantum Wells
in Si-pn Junctions