Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[23p-E202-1~14] 15.4 III-V-group nitride crystals

Wed. Mar 23, 2022 2:15 PM - 6:15 PM E202 (E202)

Kazunobu Kojima(Osaka Univ.), Ryota Ishii(Kyoto Univ.), Hideaki Murotani(Tokuyama College)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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2:15 PM - 2:30 PM

[23p-E202-1] Al composition dependence of AlGaN barrier layer in InGaN-based nanocolumns with red emission MQWs

〇Jumpei Yamada¹, Tatsuya Honda¹, Ai Mizuno¹, Rie Togashi^1,2, Ichirou Nomura^1,2, Tomohiro Yamaguchi³, Tohru Honda³, Katsumi Kishino¹ (1.Sophia Nanotech., 2.Sophia Univ., 3.Kogakuin Univ.)

2:30 PM - 2:45 PM

△ [23p-E202-2] Tuning of Localized Surface Plasmon Resonance in Green Wavelength Region and High-Efficiency Light Emission in Nitride Semiconductors

〇Yuki Kamei¹, Seiya Kaito¹, Tetsuya Matsuyama¹, Kenji Wada¹, Mitsuru Funato², Yoichi Kawakami², Koichi Okamoto¹ (1.Osaka Pref. Univ., 2.Kyoto Univ.)

2:45 PM - 3:00 PM

[23p-E202-3] Analysis of phonon transport processes in In_0.05Ga_0.95N/GaN heterostructures by simultaneous two-wavelength laser irradiation

〇(M1)Tomoya Nakayama¹, Kotaro Ito¹, Bei Ma¹, Daisuke Iida², Kazuhiro Ohkawa², Yoshihiro Ishitani¹, Tatsuya Asaji¹, Mohammed Najimi² (1.Chiba Univ., 2.Abdullah Univ.)

3:00 PM - 3:15 PM

[23p-E202-4] Separate Evaluation of Radiative and Non-Radiative Recombination Lifetimes in InGaN Quantum Wells by Combination of Simultaneous Photoacoustic & Photoluminescence and Time-Resolved Photoluminescence Measurements

Keito Mori-Tamamura¹, Yuya Morimoto¹, Shunya Hakamata¹, 〇Atsushi Yamaguchi¹, Susumu Kusanagi², Yuya Kanitani², Yoshihiro Kudo², Shigetaka Tomiya² (1.Kanazawa Inst. Tech., 2.Sony Group Corp.)

3:15 PM - 3:30 PM

[23p-E202-5] Dependence of emission wavelength of green-luminescent InGaN-based multiple quantum wells on excitation wavelength

Keigo Nakatsuru¹, Satoshi Kurai¹, Narihito Okada¹, 〇Hideaki Murotani², Yoshiki Yano³, Shuichi Ozeki³, Guanxi Piao³, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll., 3.Taiyo Nippon Sanso Corp.)

3:45 PM - 4:00 PM

[23p-E202-6] High-temperature stimulated emission from AlGaN-based UV-C multiple quantum wells

Akira Hamada¹, Takuya Fukuda¹, Satoshi Kurai¹, Narihito Okada¹, 〇Hideaki Murotani², Noritoshi Maeda³, M. Ajmal Khan³, Masafumi Jo³, Hideki Hirayama³, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll., 3.RIKEN)

4:00 PM - 4:15 PM

[23p-E202-7] Cathodoluminescence mapping of AlGaN multiple quantum wells on sputter-deposited AlN templates with various offcut angles

〇Satoshi Kurai¹, Megumi Fujii¹, Yuta Ohnishi¹, Fumiya Nakatani¹, Narihito Okada¹, Kenjiro Uesugi^2,4, Hideto Miyake^3,4, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.SPORR, Mie Univ., 3.Grad. School of Eng., Mie Univ., 4.Grad. School of RIS, Mie Univ.)

4:15 PM - 4:30 PM

△ [23p-E202-8] Photoluminescence studies of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy

〇Hiroto Imashiro¹, Ryo Yamahida¹, Hironao Kanamori¹, Ryuichi Watanabe¹, Takeshi Kimura², Taichiro Konno², Hajime Fujikura², Atsushi Yamaguchi¹ (1.KIT, 2.SCIOCS)

4:30 PM - 4:45 PM

[23p-E202-9] Study of in-gap luminescence from the evaluation of non-radiative recombination

〇Masatomo Sumiya¹, Yuya Morimoto², Atsushi Yamaguchi², Shuhei Yashiro³, Toru Honda³ (1.NIMS, 2.KIT, 3.Kougakuin Univ.)

4:45 PM - 5:00 PM

△ [23p-E202-10] Exciton emission dynamics from cryogenic to room temperature analyzed by phononic-excitonic-radiative model

〇(M2)Masaya Chizaki¹, Kensuke Oki¹, Yoshihiro Ishitani¹ (1.Chiba Univ.)

5:15 PM - 5:30 PM

[23p-E202-11] Local Electronic Properties and Thermal Stress Effects on N-type GaN Crystals in contact with Multilayer Electrode Film by Micro-Raman Spectroscopy at High Temperature

〇Jun Suda¹, Motoki Kawase¹ (1.Chukyo University)

5:30 PM - 5:45 PM

[23p-E202-12] Elucidation of carrier transfer mechanism on photoelectrode surface using single-crystalline gallium nitride substrate

〇Shingi Yamaguchi¹, Takaya Ochiai², Tsutomu Minegishi¹, Masakazu Sugiyama^1,2 (1.RCAST, 2.Tokyo Univ.)

5:45 PM - 6:00 PM

[23p-E202-13] Near-bandgap optical characterization of Al_1-xIn_xN alloys grown on a sapphire substrate by using spectroscopic ellipsometry

〇Hayata Toyoda¹, Yuto Murakami¹, Rino Miyata¹, Daichi Imai¹, Takao Miyajima¹, Makoto Miyoshi², Tetsuya Takeuchi¹ (1.Meijo Univ., 2.Nagoya Inst. of Tech.)

6:00 PM - 6:15 PM

[23p-E202-14] Below bandgap optical absorption processes of Al_1-xIn_xN thin films grown on a sapphire substrate

〇Yuto Murakami¹, Hayata Toyoda¹, Kazutoshi Kubo¹, Kyosuke Masaki¹, Daichi Imai¹, Takao Miyajima¹, Makoto Miyoshi², Tetsuya Takeuchi¹ (1.Meijo Univ, 2.Nagoya Inst. of Tech)

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