Oral presentation

CS Code-sharing session » 【CS.9】 Code-sharing Session of 13.7 & 15.6

[23p-E302-1~18] CS.9 Code-sharing Session of 13.7 & 15.6

Wed. Mar 23, 2022 1:30 PM - 6:30 PM E302 (E302)

Kenji Shiojima(Univ. of Fukui), Tanaka Ryou(Fuji Electric)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

[23p-E302-1] [The 43rd JSAP Paper Award Speech] Room-temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures

〇Shigefusa Chichibu¹, Kohei Shima¹, Kazunobu Kojima¹, Shin-ya Takashima², Katsunori Ueno², Masaharu Edo², Hiroko Iguchi³, Tetsuo Narita³, Keita Kataoka³, Shoji Ishibashi⁴, Akira Uedono⁵ (1.IMRAM-Tohoku Univ., 2.Fuji Electric, 3.Toyota Central R&D Labs., 4.AIST, 5.Univ. of Tsukuba)

2:00 PM - 2:15 PM

△ [23p-E302-2] Characterization of photoionization cross section ratios of electron traps in n-type GaN by optical ICTS using sub-bandgap-light irradiation

〇Meguru Endo¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

2:15 PM - 2:30 PM

[23p-E302-3] Mg clustering mechanism by high-concentration Mg implantation into GaN

〇Ryo Tanaka¹, Ashutosh Kumar², Jun Chen², Shinya Takashima¹, Masaharu Edo¹, Jun Uzuhashi², Tadakatsu Ohkubo², Takashi Sekiguchi², Kazutaka Mitsuishi², Kazuhiro Hono² (1.Fuji Electric, 2.NIMS)

2:30 PM - 2:45 PM

[23p-E302-4] Annealing temperature dependence of depth distribution of net donor density in ultra-low concentration Si-ion implanted GaN

〇Hiroko Iguchi¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

2:45 PM - 3:00 PM

△ [23p-E302-5] Threshold voltage control of p-type gate AlGaN/GaN HEMT using Mg diffusion by UHPA

〇Shunpei Yamashita¹, Hirotaka Watanabe², Yuto Ando², Atsushi Tanaka², Manato Deki^1,3, Shugo Nitta², Yoshio Honda², Michal Bockowski^2,5, Tetsu Kachi², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Ngoya Univ., 3.Nagoya VBL, 4.Nagoya ARC, 5.UNIPRESS)

3:00 PM - 3:15 PM

[23p-E302-6] The p-type conversion process by Mg thermal diffusion into GaN

〇Yuta Ito¹, Shun Lu¹, Hirotaka Watanabe², Manato Deki³, Shugo Nitta², Yoshio Honda², Atsushi Tanaka², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

3:15 PM - 3:30 PM

[23p-E302-7] Control of Mg concentration in GaN using vacancy-induced Mg diffusion

〇Yuta Ito¹, Kenya Shimamura¹, Hirotaka Watanabe², Manato Deki³, Shugo Nitta², Yoshio Honda², Atsushi Tanaka², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

3:30 PM - 3:45 PM

[23p-E302-8] Reverse leakage current due to band-to-band tunneling in dislocation-free GaN pn junctions

〇Tetsuo Narita¹, Tomoyuki Shoji¹, Yoshitaka Nagasato², Masakazu Kanechika³, Takeshi Kondo³, Tsutomu Uesugi³, Kazuyoshi Tomita³, Satoshi Ikeda², Tomohiko Mori¹, Satoshi Yamaguchi¹, Yasuji Kimoto¹, Jun Kojima³, Jun Suda³ (1.Toyota CRDL., 2.MIRISE Technologies, 3.Nagoya Univ.)

3:45 PM - 4:00 PM

[23p-E302-9] Increase of reverse leakage current at GaN p-n junctions induced by forward current stress

〇Tetsuo Narita¹, Yoshitaka Nagasato², Masakazu Kanechika³, Takeshi Kondo³, Tsutomu Uesugi³, Kazuyoshi Tomita³, Satoshi Ikeda², Satoshi Yamaguchi¹, Yasuji Kimoto¹, Masayoshi Kosaki⁴, Tohru Oka⁴, Jun Kojima³, Jun Suda³ (1.Toyota CRDL., 2.MIRISE Technologies, 3.Nagoya Univ., 4.Toyoda Gosei)

4:15 PM - 4:30 PM

△ [23p-E302-10] Electrical Characteristics of p-n Junctions Realized by Distributed-polarization Doping

〇Takeru Kumabe¹, Seiya Kawasaki¹, Hirotaka Watanabe², Yuto Ando², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Grad. Sch. Eng. Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

4:30 PM - 4:45 PM

△ [23p-E302-11] Origin of peak observed in reverse current-voltage characteristics of homoepitaxial GaN pn junction diodes

〇Takuto Ohashi¹, Masakazu Kanechika², Takeshi Kondo², Tsutomu Uesugi², Kazuyoshi Tomita², Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS Nagoya Univ.)

4:45 PM - 5:00 PM

△ [23p-E302-12] Proposal of a Method for Carrier Concentration Distribution Measurement in GaN Vertical p-n Diode under Forward Bias utilizing Multi Photon Excitation OBIC

〇Makoto Yagi¹, Seiya Kawasaki¹, Takeru Kumabe¹, Yuto Ando², Atsushi Tanaka², Manato Deki^1,4, Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ.)

5:00 PM - 5:15 PM

△ [23p-E302-13] Current increasing around avalanche breakdown of vertical p-n junction diode by dislocations

〇Woong Kwon¹, Seiya Kawasaki¹, Hirotaka Watanabe², Atsushi Tanaka², Manato Deki^1,3, Shugo Nitta², Yoshio Honda², Hirotaka Ikeda⁴, Kenji Iso^2,4, Hiroshi Amano^2,3,5 (1.Nagoya Univ., 2.IMaSS, 3.VBL, Nagoya Univ., 4.Mitsubishi Chemical, 5.Akasaki R.C.)

5:15 PM - 5:30 PM

△ [23p-E302-14] Two-dimensional characterization of electric fields in n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy

〇Yuto Yasui¹, Fumimasa Horikiri², Yoshinobu Narita², Noboru Fukuhara², Tomoyoshi Mishima³, Hiroki Imabayashi¹, Kenji Shiojima¹ (1.Univ. of Fukui, 2.SCIOCS, 3.Hosei Univ.)

5:30 PM - 5:45 PM

△ [23p-E302-15] Junction Diameter Dependence of Oscillation Characteristics of GaN IMPATT Diode

〇Seiya Kawasaki¹, Takeru Kumabe¹, Yuto Ando², Manato Deki^1,3, Hirotaka Watanabe², Atsushi Tanaka², Shugo Nitta², Yoshio Honda², Manabu Arai², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.VBL, Nagoya Univ., 4.ARC, Nagoya Univ.)

5:45 PM - 6:00 PM

△ [23p-E302-16] Effect of oxide species on contact resistivity of n-GaN/Oxide/Al

〇(D)Jiro Koba^1,2, Junichi Koike¹ (1.Tohoku Univ., 2.JX Nippon Mining & Metals Corporation)

6:00 PM - 6:15 PM

△ [23p-E302-17] Reduction of Specific Contact Resistance on p^--GaN by Thermal Annealed Mg Layer

〇Shun Lu¹, Manato Deki², Jia Wang³, Kazuki Ohnishi¹, Yuto Ando³, Hirotaka Watanabe³, Takeru Kumabe¹, Shugo Nitta³, Yoshio Honda³, Hiroshi Amano^2,3 (1.Dept. of Elec. Nagoya Univ., 2.Nagoya Univ. VBL, 3.Nagoya Univ. IMaSS)

6:15 PM - 6:30 PM

△ [23p-E302-18] Characterization of the terahertz emission from semi-insulating gallium nitride and hydrogen dissociation under UV irradiation

〇Fumikazu Murakami¹, Mannan Abdul¹, Kazunori Serita¹, Hironaru Murakami¹, Masayoshi Tonouchi¹ (1.ILE Osaka Univ.)

Session information

[23p-E302-1~18] CS.9 Code-sharing Session of 13.7 & 15.6

[23p-E302-1] [The 43rd JSAP Paper Award Speech] Room-temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures

△ [23p-E302-2] Characterization of photoionization cross section ratios of electron traps in n-type GaN by optical ICTS using sub-bandgap-light irradiation

[23p-E302-3] Mg clustering mechanism by high-concentration Mg implantation into GaN

[23p-E302-4] Annealing temperature dependence of depth distribution of net donor density in ultra-low concentration Si-ion implanted GaN

△ [23p-E302-5] Threshold voltage control of p-type gate AlGaN/GaN HEMT using Mg diffusion by UHPA

[23p-E302-6] The p-type conversion process by Mg thermal diffusion into GaN

[23p-E302-7] Control of Mg concentration in GaN using vacancy-induced Mg diffusion

[23p-E302-8] Reverse leakage current due to band-to-band tunneling in dislocation-free GaN pn junctions

[23p-E302-9] Increase of reverse leakage current at GaN p-n junctions induced by forward current stress

△ [23p-E302-10] Electrical Characteristics of p-n Junctions Realized by Distributed-polarization Doping

△ [23p-E302-11] Origin of peak observed in reverse current-voltage characteristics of homoepitaxial GaN pn junction diodes

△ [23p-E302-12] Proposal of a Method for Carrier Concentration Distribution Measurement in GaN Vertical p-n Diode under Forward Bias utilizing Multi Photon Excitation OBIC

△ [23p-E302-13] Current increasing around avalanche breakdown of vertical p-n junction diode by dislocations

△ [23p-E302-14] Two-dimensional characterization of electric fields in n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy

△ [23p-E302-15] Junction Diameter Dependence of Oscillation Characteristics of GaN IMPATT Diode

△ [23p-E302-16] Effect of oxide species on contact resistivity of n-GaN/Oxide/Al

△ [23p-E302-17] Reduction of Specific Contact Resistance on p^--GaN by Thermal Annealed Mg Layer

△ [23p-E302-18] Characterization of the terahertz emission from semi-insulating gallium nitride and hydrogen dissociation under UV irradiation

Authenticate

Session information

[23p-E302-1~18] CS.9 Code-sharing Session of 13.7 & 15.6

[23p-E302-1] [The 43rd JSAP Paper Award Speech] Room-temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures

△ [23p-E302-2] Characterization of photoionization cross section ratios of electron traps in n-type GaN by optical ICTS using sub-bandgap-light irradiation

[23p-E302-3] Mg clustering mechanism by high-concentration Mg implantation into GaN

[23p-E302-4] Annealing temperature dependence of depth distribution of net donor density in ultra-low concentration Si-ion implanted GaN

△ [23p-E302-5] Threshold voltage control of p-type gate AlGaN/GaN HEMT using Mg diffusion by UHPA

[23p-E302-6] The p-type conversion process by Mg thermal diffusion into GaN

[23p-E302-7] Control of Mg concentration in GaN using vacancy-induced Mg diffusion

[23p-E302-8] Reverse leakage current due to band-to-band tunneling in dislocation-free GaN pn junctions

[23p-E302-9] Increase of reverse leakage current at GaN p-n junctions induced by forward current stress

△ [23p-E302-10] Electrical Characteristics of p-n Junctions Realized by Distributed-polarization Doping

△ [23p-E302-11] Origin of peak observed in reverse current-voltage characteristics of homoepitaxial GaN pn junction diodes

△ [23p-E302-12] Proposal of a Method for Carrier Concentration Distribution Measurement in GaN Vertical p-n Diode under Forward Bias utilizing Multi Photon Excitation OBIC

△ [23p-E302-13] Current increasing around avalanche breakdown of vertical p-n junction diode by dislocations

△ [23p-E302-14] Two-dimensional characterization of electric fields in n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy

△ [23p-E302-15] Junction Diameter Dependence of Oscillation Characteristics of GaN IMPATT Diode

△ [23p-E302-16] Effect of oxide species on contact resistivity of n-GaN/Oxide/Al

△ [23p-E302-17] Reduction of Specific Contact Resistance on p--GaN by Thermal Annealed Mg Layer

△ [23p-E302-18] Characterization of the terahertz emission from semi-insulating gallium nitride and hydrogen dissociation under UV irradiation

Authenticate

△ [23p-E302-17] Reduction of Specific Contact Resistance on p^--GaN by Thermal Annealed Mg Layer