[24a-E202-1~10] 15.4 III-V-group nitride crystals

Thu. Mar 24, 2022 9:15 AM - 12:00 PM E202 (E202)

Narihito Okada(Yamaguchi Univ.), Atsushi Tanaka(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:15 AM - 9:30 AM

[24a-E202-1] Microstructural analysis of thick AlN films on NPSS by cross-sectional and plan-view TEM

〇Yudai Nakanishi¹, Takeaki Hamachi¹, Nakajima Yoshitaka², Yusuke Hayashi¹, Tetsuya Tohei¹, Shiyu Xiao³, Kanako Shojiki⁴, Hideto Miyake^4,5, Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.INSD., Osaka Univ., 3.SPORR., Mie Univ., 4.Grad. Sch. Eng., Mie Univ., 5.Grad. Sch. RIS., Mie Univ.)

9:30 AM - 9:45 AM

△ [24a-E202-2] High-spatial-resolution 3D tomographic analysis using depth-resolved nanobeam X-ray diffraction for thick AlN films on cone-type nano-patterned sapphire substrates

〇Yudai Nakanishi¹, Yusuke Hayashi¹, Tetsuya Tohei¹, Kazushi Sumitani², Yasuhiko Imai², Shigeru Kimura², Shiyu Xiao³, Hideto Miyake^4,5, Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.JASRI, 3.SPORR., Mie Univ., 4.Grad. Sch. RIS., Mie Univ., 5.Grad. Sch. Eng., Mie Univ.)

9:45 AM - 10:00 AM

[24a-E202-3] Polarity Determination of Multilayer Polarity Inverted AlN Using Inclined-Plane KOH Etching

〇Yusuke Hayashi¹, Yudai Nakanishi¹, Tetsuya Tohei¹, Kenjiro Uesugi^2,3, Kanako Shojiki⁴, Hideto Miyake^3,4, Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.SPORR, Mie Univ., 3.Grad. Sch. RIS, Mie Univ., 4.Grad. Sch. Eng., Mie Univ.)

10:00 AM - 10:15 AM

[24a-E202-4] Oxygen plasma irradiation effects on AlN polarity inverted structure fabricated by sputtering and annealing method

〇Yusuke Hayashi¹, Jiaying Li¹, Yudai Nakanishi¹, Tetsuya Tohei¹, Kenjiro Uesugi^2,3, Kanako Shojiki⁴, Hideto Miyake^3,4, Nobuyuki Ikarashi⁵, Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.SPORR, Mie Univ., 3.Grad. Sch. RIS, Mie Univ., 4.Grad. Sch. Eng., Mie Univ., 5.IMaSS, Nagoya Univ.)

10:15 AM - 10:30 AM

[24a-E202-5] Possible Influence of Oxygen Segregation on Reducing Specific Surface Energies for m-Plane Sides of Nanopipes in GaN

〇Kazuhiro Mochizuki¹, Fumimasa Horikiri², Hiroshi Ohta¹, Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

10:30 AM - 10:45 AM

▼ [24a-E202-6] Structural Analysis on OVPE GaN by Nanobeam X-ray Diffraction

〇Zhendong WU¹, Yudai Nakanish¹, Yusuke Hayashi¹, Tetsuya Tohei¹, Junichi Takino², Yasuhiko Imai³, Kazushi Sumitani³, Shigeru Kimura³, Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.Panasonic Corp., 3.JASRI)

11:00 AM - 11:15 AM

[24a-E202-7] Evaluation of leakage current characteristics of Schottky contacts formed on individual threading dislocations having a screw-component in a free-standing GaN substrate

〇Takeaki Hamachi¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Shigeyoshi Usami², Masayuki Imanishi², Yusuke Mori², Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ.)

11:15 AM - 11:30 AM

△ [24a-E202-8] Analysis of I-V-T characteristics of a Schottky contact formed on a screw dislocation with b=1c inducing the significant leakage current in a GaN substrate

11:30 AM - 11:45 AM

[24a-E202-9] Peculiar Photoluminescence in GaN Vertical PN Diode

〇Tomoyuki Tanikawa¹, Mayuko Tsukakoshi¹, Shigeyoshi Usami¹, Masayuki Imanishi¹, Yusuke Mori¹, Seiya Kawasaki², Atsushi Tanaka³, Yoshio Honda³, Hiroshi Amano³, Masahiro Uemukai¹, Ryuji Katayama¹ (1.Osaka Univ., 2.Nagoya Univ., 3.IMaSS, Nagoya Univ.)

11:45 AM - 12:00 PM

[24a-E202-10] An Ab initio-based approach for formation of pyramidal inversion domain boundaries in nitride semiconductors

〇(M2)Katsuhide Niki¹, Toru Akiyama¹, Tomonori Ito¹ (1.Mie Univ.)

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