Oral presentation

CS Code-sharing session » 【CS.9】 Code-sharing Session of 13.7 & 15.6

[24a-E302-1~13] CS.9 Code-sharing Session of 13.7 & 15.6

Thu. Mar 24, 2022 9:00 AM - 12:30 PM E302 (E302)

Takuji Hosoi(Kwansei Gakuin Univ.), Noriyuki Taoka(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [24a-E302-1] Characterization of mist-Al₂O₃ gate insulator and its application in mist-Al₂O₃/AlGaN/GaN MOS-HEMTs

〇(M1)Tomohiro Motoyama¹, Shun Urano², Ali Baratov², Yusui Nakamura¹, Masaaki Kuzuhara³, Joel Asubar², Zenji Yatabe¹ (1.Kumamoto Univ., 2.Univ. of Fukui, 3.Kwansei Gakuin Univ.)

9:15 AM - 9:30 AM

△ [24a-E302-2] AlGaN/GaN MIS-HEMTs with mist- and ALD-Al₂O₃ gate dielectric

〇Shun Urano¹, Joel Asubar¹, Rui Shan Low¹, Faris Muhammad¹, Masaki Ishiguro¹, Itsuki Nagase¹, Ali Batarov¹, Tomohiro Motoyama², Yusui Nakamura², Masaaki Kuzuhara³, Zenji Yatabe² (1.Univ. Fukui, 2.Kumamoto Univ., 3.Kwansei Univ.)

9:30 AM - 9:45 AM

[24a-E302-3] Demonstration of normally-off operation in EID AlGaN/GaN MOS-HEMT

〇Takuma Nanjo¹, Tomohiro Shinagawa¹, Tatsuro Watahiki¹, Naruhisa Miura¹, Takashi Egawa² (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation, 2.Nagoya Inst. of Tech)

9:45 AM - 10:00 AM

[24a-E302-4] Threshold Voltage Shift under Positive Bias Stress in Vertical GaN Trench MOSFETs

〇Mitsuki Inagaki¹, Tohru Oka^1,2, Nariaki Tanaka², Kazuya Hasegawa², Takatomi Izumi², Jun Suda¹ (1.Nagoya Univ., 2.Toyoda Gosei)

10:00 AM - 10:15 AM

△ [24a-E302-5] Characterization of AlSiO/n-GaN MOS Structures with Ultra-high-pressure Annealing

〇Tomoya Tokozumi¹, Masakazu Kanechika², Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

10:15 AM - 10:30 AM

△ [24a-E302-6] Formation of Stable GaN MOS Structures Based on Sputter Deposition of SiO₂ Dielectrics

〇(B)Kentaro Onishi¹, Bunichiro Mikake¹, Kazuki Tomigahara¹, Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takayoshi Shimura¹, HeHeiji Watanabe¹ (1.Osaka Univ.)

10:45 AM - 11:00 AM

△ [24a-E302-7] Formation of High-quality SiO₂/GaN MOS Structures by Controlling Oxidation and Reduction Processes

〇Bunichiro Mikake¹, Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

11:00 AM - 11:15 AM

[24a-E302-8] Electrical Properties at Elevated Temperature of Al₂O₃/GaN Interface with HCl Pretreatment

〇Taisei Nagai¹, Noriyuki Taoka¹, Akio Ohta¹, Makihara Katsunori¹, Miyazaki Seiichi¹ (1.Nagoya Univ.)

11:15 AM - 11:30 AM

[24a-E302-9] Characterization for trap states of SiO₂/GaN interfaces and SiO₂ films by DLTS

〇Shingo Ogawa¹, Hidetoshi Mizobata², Takuma Kobayashi², Takayoshi Shimura², Heiji Watanabe² (1.Toray Research Center, 2.Osaka Univ.)

11:30 AM - 11:45 AM

[24a-E302-10] Effects of Substrate Polarity and Acceptor Concentrations on Electrical Properties of p-GaN MOS Devices Fabricated by Mg-Implantation and Ultra-High-Pressure Annealing

〇Hidetoshi Mizobata¹, Yuhei Wada¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takuji Hosoi¹, Tetsu Kachi², Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Nagoya Univ. IMaSS)

11:45 AM - 12:00 PM

△ [24a-E302-11] Evaluation of Hole Traps in GaN MOS Structures by Ultraviolet Light Illumination

〇Kazuki Tomigahara¹, Takato Nakanuma¹, Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

12:00 PM - 12:15 PM

△ [24a-E302-12] Investigation of the cause of hole traps at the GaN/SiO₂ interface and countermeasures

〇Shuto Hattori¹, Kenta Chokawa², Atsushi Oshiyama², Kenji Shiraishi^2,1 (1.School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ.)

12:15 PM - 12:30 PM

[24a-E302-13] Effects of post-deposition annealing on SiO₂/β-Ga₂O₃(001) band diagram

〇Daiki Takeda¹, Koji Kita¹ (1.The Univ. of Tokyo)

Session information

[24a-E302-1~13] CS.9 Code-sharing Session of 13.7 & 15.6

△ [24a-E302-1] Characterization of mist-Al₂O₃ gate insulator and its application in mist-Al₂O₃/AlGaN/GaN MOS-HEMTs

△ [24a-E302-2] AlGaN/GaN MIS-HEMTs with mist- and ALD-Al₂O₃ gate dielectric

[24a-E302-3] Demonstration of normally-off operation in EID AlGaN/GaN MOS-HEMT

[24a-E302-4] Threshold Voltage Shift under Positive Bias Stress in Vertical GaN Trench MOSFETs

△ [24a-E302-5] Characterization of AlSiO/n-GaN MOS Structures with Ultra-high-pressure Annealing

△ [24a-E302-6] Formation of Stable GaN MOS Structures Based on Sputter Deposition of SiO₂ Dielectrics

△ [24a-E302-7] Formation of High-quality SiO₂/GaN MOS Structures by Controlling Oxidation and Reduction Processes

[24a-E302-8] Electrical Properties at Elevated Temperature of Al₂O₃/GaN Interface with HCl Pretreatment

[24a-E302-9] Characterization for trap states of SiO₂/GaN interfaces and SiO₂ films by DLTS

[24a-E302-10] Effects of Substrate Polarity and Acceptor Concentrations on Electrical Properties of p-GaN MOS Devices Fabricated by Mg-Implantation and Ultra-High-Pressure Annealing

△ [24a-E302-11] Evaluation of Hole Traps in GaN MOS Structures by Ultraviolet Light Illumination

△ [24a-E302-12] Investigation of the cause of hole traps at the GaN/SiO₂ interface and countermeasures

[24a-E302-13] Effects of post-deposition annealing on SiO₂/β-Ga₂O₃(001) band diagram

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Session information

[24a-E302-1~13] CS.9 Code-sharing Session of 13.7 & 15.6

△ [24a-E302-1] Characterization of mist-Al2O3 gate insulator and its application in mist-Al2O3/AlGaN/GaN MOS-HEMTs

△ [24a-E302-2] AlGaN/GaN MIS-HEMTs with mist- and ALD-Al2O3 gate dielectric

[24a-E302-3] Demonstration of normally-off operation in EID AlGaN/GaN MOS-HEMT

[24a-E302-4] Threshold Voltage Shift under Positive Bias Stress in Vertical GaN Trench MOSFETs

△ [24a-E302-5] Characterization of AlSiO/n-GaN MOS Structures with Ultra-high-pressure Annealing

△ [24a-E302-6] Formation of Stable GaN MOS Structures Based on Sputter Deposition of SiO2 Dielectrics

△ [24a-E302-7] Formation of High-quality SiO2/GaN MOS Structures by Controlling Oxidation and Reduction Processes

[24a-E302-8] Electrical Properties at Elevated Temperature of Al2O3/GaN Interface with HCl Pretreatment

[24a-E302-9] Characterization for trap states of SiO2/GaN interfaces and SiO2 films by DLTS

[24a-E302-10] Effects of Substrate Polarity and Acceptor Concentrations on Electrical Properties of p-GaN MOS Devices Fabricated by Mg-Implantation and Ultra-High-Pressure Annealing

△ [24a-E302-11] Evaluation of Hole Traps in GaN MOS Structures by Ultraviolet Light Illumination

△ [24a-E302-12] Investigation of the cause of hole traps at the GaN/SiO2 interface and countermeasures

[24a-E302-13] Effects of post-deposition annealing on SiO2/β-Ga2O3(001) band diagram

Authenticate

△ [24a-E302-1] Characterization of mist-Al₂O₃ gate insulator and its application in mist-Al₂O₃/AlGaN/GaN MOS-HEMTs

△ [24a-E302-2] AlGaN/GaN MIS-HEMTs with mist- and ALD-Al₂O₃ gate dielectric

△ [24a-E302-6] Formation of Stable GaN MOS Structures Based on Sputter Deposition of SiO₂ Dielectrics

△ [24a-E302-7] Formation of High-quality SiO₂/GaN MOS Structures by Controlling Oxidation and Reduction Processes

[24a-E302-8] Electrical Properties at Elevated Temperature of Al₂O₃/GaN Interface with HCl Pretreatment

[24a-E302-9] Characterization for trap states of SiO₂/GaN interfaces and SiO₂ films by DLTS

△ [24a-E302-12] Investigation of the cause of hole traps at the GaN/SiO₂ interface and countermeasures

[24a-E302-13] Effects of post-deposition annealing on SiO₂/β-Ga₂O₃(001) band diagram