Oral presentation

CS Code-sharing session » 【CS.5】 Code-sharing Session of 6.1 & 13.3 & 13.5

[24p-E105-1~13] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

Thu. Mar 24, 2022 1:30 PM - 5:00 PM E105 (E105)

Takao Shimizu(NIMS), Shoichi Kabuyanagi(キオクシア)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

△ [24p-E105-1] The film-thickness dependence of polarization-reversal dynamics in HfO₂-based ferroelectrics

〇(M2)Yoshiki Sawabe¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi^1,2 (1.IIS, Univ. Tokyo, 2.d.lab, Univ. Tokyo)

1:45 PM - 2:00 PM

[24p-E105-2] On the intrinsic polarization switching in ferroelectric capacitors

〇Akira Toriumi¹, Shinji Migita² (1.Free Engineer, 2.AIST)

2:00 PM - 2:15 PM

[24p-E105-3] Stability and dielectric property of ferroelectric HfO₂thin films: first-principles study

〇Yoshikazu Maki¹, Arai Kazuaki¹, Aradai Masaaki², Shiraishi Kenji², Nakayama Takashi¹ (1.Chiba Univ., 2.Nagoya Univ.)

2:15 PM - 2:30 PM

△ [24p-E105-4] Effects of Hf_xZr_1-xO₂ ferroelectrics/Ge MFIS interfaces on the polarization reversal behavior

〇Koichiro Iwashige¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Tokyo Univ.)

2:30 PM - 2:45 PM

[24p-E105-5] Improvement of ferroelectricity and suppression of SiO₂ interfacial layer in TiN/ZrO₂/Hf_xZr_1−xO₂/SiO₂/Si-MFS structures using ZrO₂ nucleation layer

〇Takashi Onaya^1,2,3, Toshihide Nabatame², Mari Inoue², Tomomi Sawada², Hiroyuki Ota¹, Yukinori Morita¹ (1.AIST, 2.NIMS, 3.JSPS Research Fellow PD)

2:45 PM - 3:00 PM

[24p-E105-6] Formation of ferroelectric ZrO₂ ultra-thin film by sputtering method

Jotaro Nagano¹, 〇Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

3:15 PM - 3:30 PM

[24p-E105-7] The effect of interface control layer on the MFSFET with ferroelectric nondoped HfO₂

〇Masakazu Tanuma¹, Joong-Won Shin¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

3:30 PM - 3:45 PM

[24p-E105-8] Ferroelectric Properties of Mist CVD-Derived Hf_xZr_1-xO₂ Thin Films Dependent on RTA Condition and Substrate

〇Yuki Fujiwara¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹, Minoru Noda¹, Sho Tanaka¹ (1.Kyoto Inst. Tech.)

3:45 PM - 4:00 PM

[24p-E105-9] Preparation of (Hf,Zr)O₂ thin films by reactive sputtering at room temperature

〇Junpei Ouchi¹, Shunsuke Hata¹, Genta Oshima¹, Hironori Fujisawa¹, Seiji Nakashima¹ (1.Univ.Hyogo)

4:00 PM - 4:15 PM

△ [24p-E105-10] Growth of (111)-oriented epitaxial (Hf,Ce)O₂ferroelectric films by PLD method and their characterization

〇(M1)Koji Hirai¹, Takahisa Shiraishi¹, Wakiko Yamaoka², Risako Tsurumaru², Yukari Inoue², Hiroshi Funakubo¹ (1.Tokyo Institute of Technology, 2.TDK Corp)

4:15 PM - 4:30 PM

▼ [24p-E105-11] Effect of Kr plasma sputtering for Pt gate electrode deposition on the ferroelectric property of 5 nm thick nondoped HfO₂ directly formed on Si(100)

〇(DC)JoongWon Shin¹, Masakazu Tanuma¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

4:30 PM - 4:45 PM

▼ [24p-E105-12] Ferroelectric polarization switching of hafnium zirconium oxide thin-film device investigated by second harmonic generation spectroscopy

〇(PC)Siddhant Anandrao Dhongade¹, Yasutaka Kitahama¹, Hiroyuki Matsuzaki¹, Hiroyuki Yamada¹, Akihito Sawa¹ (1.National Institute of Advanced Industrial Science and Technology (AIST))

4:45 PM - 5:00 PM

[24p-E105-13] Observation of Polarization Domain Structure of HfO₂ Films using Direct Piezoelectric Response Microscopy

〇Takuto Hagiwara¹, Yukinori Morita², Hiroyuki Ota², Shinji Migita², Norifumi Fujimura¹, Takeshi Yoshimura¹ (1.Osaka Pref. Univ., 2.AIST)

Session information

[24p-E105-1~13] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

△ [24p-E105-1] The film-thickness dependence of polarization-reversal dynamics in HfO₂-based ferroelectrics

[24p-E105-2] On the intrinsic polarization switching in ferroelectric capacitors

[24p-E105-3] Stability and dielectric property of ferroelectric HfO₂thin films: first-principles study

△ [24p-E105-4] Effects of Hf_xZr_1-xO₂ ferroelectrics/Ge MFIS interfaces on the polarization reversal behavior

[24p-E105-5] Improvement of ferroelectricity and suppression of SiO₂ interfacial layer in TiN/ZrO₂/Hf_xZr_1−xO₂/SiO₂/Si-MFS structures using ZrO₂ nucleation layer

[24p-E105-6] Formation of ferroelectric ZrO₂ ultra-thin film by sputtering method

[24p-E105-7] The effect of interface control layer on the MFSFET with ferroelectric nondoped HfO₂

[24p-E105-8] Ferroelectric Properties of Mist CVD-Derived Hf_xZr_1-xO₂ Thin Films Dependent on RTA Condition and Substrate

[24p-E105-9] Preparation of (Hf,Zr)O₂ thin films by reactive sputtering at room temperature

△ [24p-E105-10] Growth of (111)-oriented epitaxial (Hf,Ce)O₂ferroelectric films by PLD method and their characterization

▼ [24p-E105-11] Effect of Kr plasma sputtering for Pt gate electrode deposition on the ferroelectric property of 5 nm thick nondoped HfO₂ directly formed on Si(100)

▼ [24p-E105-12] Ferroelectric polarization switching of hafnium zirconium oxide thin-film device investigated by second harmonic generation spectroscopy

[24p-E105-13] Observation of Polarization Domain Structure of HfO₂ Films using Direct Piezoelectric Response Microscopy

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Session information

[24p-E105-1~13] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

△ [24p-E105-1] The film-thickness dependence of polarization-reversal dynamics in HfO2-based ferroelectrics

△ [24p-E105-4] Effects of HfxZr1-xO2 ferroelectrics/Ge MFIS interfaces on the polarization reversal behavior

△ [24p-E105-10] Growth of (111)-oriented epitaxial (Hf,Ce)O2 ferroelectric films by PLD method and their characterization

▼ [24p-E105-11] Effect of Kr plasma sputtering for Pt gate electrode deposition on the ferroelectric property of 5 nm thick nondoped HfO2 directly formed on Si(100)

▼ [24p-E105-12] Ferroelectric polarization switching of hafnium zirconium oxide thin-film device investigated by second harmonic generation spectroscopy

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△ [24p-E105-1] The film-thickness dependence of polarization-reversal dynamics in HfO₂-based ferroelectrics

△ [24p-E105-4] Effects of Hf_xZr_1-xO₂ ferroelectrics/Ge MFIS interfaces on the polarization reversal behavior

△ [24p-E105-10] Growth of (111)-oriented epitaxial (Hf,Ce)O₂ferroelectric films by PLD method and their characterization

▼ [24p-E105-11] Effect of Kr plasma sputtering for Pt gate electrode deposition on the ferroelectric property of 5 nm thick nondoped HfO₂ directly formed on Si(100)