Oral presentation

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[24p-E202-9~17] 10.3 Spin devices, magnetic memories and storages

Thu. Mar 24, 2022 4:00 PM - 6:30 PM E202 (E202)

Yoichi Shiota(Kyoto Univ.), Koyama Tomohiro(阪大)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 4:15 PM

▼ [24p-E202-9] First Principles Studies on the Effect of Grain Boundaries in MgO on Interfacial Perpendicular Magnetic Anisotropy Energy at Fe/MgO Interface in STT-MRAM

〇Keisuke Morishita¹, Yosuke Harashima², Masaaki Araidai^1,3, Tetsuo Endoh^4,5,6, Kenji Shiraishi^1,3,4 (1.Nagoya Univ., 2.NAIST, 3.IMass, 4.CIES, 5.Tohoku Univ., 6.RIEC)

4:15 PM - 4:30 PM

▼ [24p-E202-10] Field-free spin-orbit torque magnetization switching in a perpendicularly magnetized (Ga,Mn)As single layer

〇(P)Miao JIANG¹, Chenda Wang¹, Shinobu Ohya^1,2,3, Masaaki Tanaka^1,2 (1.EEIS, Univ. of Tokyo, 2.CSRN, Univ. of Tokyo, 3.IEI, Univ. of Tokyo)

4:30 PM - 4:45 PM

▼ [24p-E202-11] Nanosecond ultralow power spin orbit torque magnetization switching induced by BiSb topological insulator

〇(P)Nguyen HuynhDuy Khang¹, Takanori Shirokura¹, Tuo Fan¹, Mao Takahashi², Naoki Nakatani², Daisuke Kato², Yasuyoshi Miyamoto², Pham Nam Hai^1,3 (1.Tokyo Tech., 2.NHK, 3.Univ. Tokyo)

4:45 PM - 5:00 PM

△ [24p-E202-12] Current-induced domain wall motion in compensated ferrimagnetic GdFeCo films

〇Mio Ishibashi¹, Kay Yakushiji², Masashi Kawaguchi¹, Arata Tsukamoto³, Satoru Nakatsuji¹, Masamitsu Hayashi¹ (1.Univ. of Tokyo, 2.AIST, 3.Nihon University)

5:00 PM - 5:15 PM

▲ [24p-E202-13] Investigation of bit shift and write operation using spin orbit torque switching in racetrack memory

Masayuki Memita¹, 〇Yuichiro Kurokawa¹, Uraku Kamihoki¹, Masahiro Fujimoto¹, Hiromi Yuasa¹ (1.Kyushu Univ.)

5:30 PM - 5:45 PM

▲ [24p-E202-14] Voltage induced coercivity change in Pt/Co/amorphous TiO_x structure

〇Tomohiro Nozaki¹, Shingo Tamaru¹, Makoto Konoto¹, Takayuki Nozaki¹, Hitoshi Kubota¹, Akio Fukushima¹, Shinji Yuasa¹ (1.AIST)

5:45 PM - 6:00 PM

▲ [24p-E202-15] Modulation of dielectric constant and VCMA efficiency in FeB/MgO/HfO₂

〇(P)Hiroshige Onoda¹, Tomohiro Nozaki¹, Shingo Tamaru¹, Makoto Konoto¹, Takayuki Nozaki¹, Hitoshi Kubota¹, Akio Fukushima¹, Shinji Yuasa¹ (1.AIST)

6:00 PM - 6:15 PM

▲ [24p-E202-16] Evaluation of Device Size and Array Resistance Dependence in Read Disturbance Reduction Effect by Bi-directional Read SOT-MRAM

〇Yuwa Kishi¹, Akihiro Yamada¹, Mengnan Ke¹, Takayuki Kawahara¹ (1.Tokyo Univ. of Sci.)

6:15 PM - 6:30 PM

▲ [24p-E202-17] Magnetization Switching Behavior in Bi-directional Read of Spin Orbit Torque MRAM

〇Akihiro Yamada¹, Yuwa Kishi¹, Mengnan Ke¹, Takayuki Kawahara¹ (1.Tokyo Univ. of Sci.)

Session information

[24p-E202-9~17] 10.3 Spin devices, magnetic memories and storages

▼ [24p-E202-9] First Principles Studies on the Effect of Grain Boundaries in MgO on Interfacial Perpendicular Magnetic Anisotropy Energy at Fe/MgO Interface in STT-MRAM

▼ [24p-E202-10] Field-free spin-orbit torque magnetization switching in a perpendicularly magnetized (Ga,Mn)As single layer

▼ [24p-E202-11] Nanosecond ultralow power spin orbit torque magnetization switching induced by BiSb topological insulator

△ [24p-E202-12] Current-induced domain wall motion in compensated ferrimagnetic GdFeCo films

▲ [24p-E202-13] Investigation of bit shift and write operation using spin orbit torque switching in racetrack memory

▲ [24p-E202-14] Voltage induced coercivity change in Pt/Co/amorphous TiO_x structure

▲ [24p-E202-15] Modulation of dielectric constant and VCMA efficiency in FeB/MgO/HfO₂

▲ [24p-E202-16] Evaluation of Device Size and Array Resistance Dependence in Read Disturbance Reduction Effect by Bi-directional Read SOT-MRAM

▲ [24p-E202-17] Magnetization Switching Behavior in Bi-directional Read of Spin Orbit Torque MRAM

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Session information

[24p-E202-9~17] 10.3 Spin devices, magnetic memories and storages

▼ [24p-E202-9] First Principles Studies on the Effect of Grain Boundaries in MgO on Interfacial Perpendicular Magnetic Anisotropy Energy at Fe/MgO Interface in STT-MRAM

▼ [24p-E202-10] Field-free spin-orbit torque magnetization switching in a perpendicularly magnetized (Ga,Mn)As single layer

▼ [24p-E202-11] Nanosecond ultralow power spin orbit torque magnetization switching induced by BiSb topological insulator

△ [24p-E202-12] Current-induced domain wall motion in compensated ferrimagnetic GdFeCo films

▲ [24p-E202-13] Investigation of bit shift and write operation using spin orbit torque switching in racetrack memory

▲ [24p-E202-14] Voltage induced coercivity change in Pt/Co/amorphous TiOx structure

▲ [24p-E202-15] Modulation of dielectric constant and VCMA efficiency in FeB/MgO/HfO2

▲ [24p-E202-16] Evaluation of Device Size and Array Resistance Dependence in Read Disturbance Reduction Effect by Bi-directional Read SOT-MRAM

▲ [24p-E202-17] Magnetization Switching Behavior in Bi-directional Read of Spin Orbit Torque MRAM

Authenticate

▲ [24p-E202-14] Voltage induced coercivity change in Pt/Co/amorphous TiO_x structure

▲ [24p-E202-15] Modulation of dielectric constant and VCMA efficiency in FeB/MgO/HfO₂