Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[24p-E204-1~10] 6.2 Carbon-based thin films

Thu. Mar 24, 2022 1:30 PM - 4:15 PM E204 (E204)

Hiroki Akasaka(Tokyo Tech), Hidetoshi Saitoh(Nagaoka Univ. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 1:45 PM

[24p-E204-1] Chemical bonding state of DLC deposited by GCIB-assisted deposition

〇Yu Owada¹, Akio Nishiyama², Ryota Yoshikawa², Junji Taguchi², Keiji Komatsu¹, Nobuo Saito¹, Hidetoshi Saitoh¹ (1.Nagaoka Univ. Tech., 2.Nomura Plating Co., Ltd.)

1:45 PM - 2:00 PM

[24p-E204-2] Order of sp² hybridized carbons in amorphous carbon film

Kazuhiro Kanda¹, Masato Niibe¹, Naoki Umada², Yuki Hirata², Naoto Ohtake², 〇Hiroki Akasaka² (1.Univ. of Hyogo, 2.Tokyo Inst. of Tech.)

2:00 PM - 2:15 PM

[24p-E204-3] Feature of DLC films sputtered by four targets facing sputtering cathode

〇Futa Kobayashi¹, Tetsuya Saruwatari¹, Kazuyuki Mabuchi¹ (1.Keihin Ramtech Co., Ltd)

2:15 PM - 2:30 PM

[24p-E204-4] Deposition of hydrogen-free diamond-like carbon film on plastic substrate by high power pulse magnetron sputtering

〇Takayuki Ohta¹, Akinori Oda², Hiroyuki Kousaka³ (1.Meijo Univ., 2.Chiba Inst. Technol., 3.Gifu Univ.)

2:30 PM - 2:45 PM

[24p-E204-5] Development of a-C electrocatalysts for CO₂ reduction: controlling overpotential for H₂ evolution and surface structures

〇Kensuke Honda¹, tomoyuki Inoue² (1.Grad. Sch. Sci. Technol. Innov., Yamaguchi Univ., 2.Fac. Sci., Yamaguchi Univ.)

3:00 PM - 3:15 PM

[24p-E204-6] Development of Si-added amorphous carbon thin films with controlling amorphous structure and establishment of its synthesis method for high efficiency multi-junction solar cells

〇(M2)Bunta Kondo¹, Kensuke Honda¹ (1.Grad. Sch. Sci. Technol. Innov. Yamaguchi Univ.)

3:15 PM - 3:30 PM

△ [24p-E204-7] Preparation of SiCN Film by Reactive RF-UBMS with Nitrogen

〇Takahiro Bando¹, Hayato Sakai¹, Toru Harigai¹, Hirofumi Takikawa¹ (1.Toyohashi Univ.)

3:30 PM - 3:45 PM

[24p-E204-8] Formation of a-CNx:H thin films using microwave plasma CVD of the C₆H₆/N₂ gas mixture

〇(B)Hiroki Aoyama¹, Takai Tsubasa¹, Ito Haruhiko¹ (1.Nagaoka Univ of Tech)

3:45 PM - 4:00 PM

△ [24p-E204-9] Ultra High-Rate Deposition and Film Quality Analysis of DLC Films Using Gas-Jet Plasma CVD Method with Ar/C₂H₂ Mixrd Gas

〇Hikaru Ohhra¹, Naoto Nagata¹, Takahiro Bando¹, Hirofumi Takikawa¹, Toru Harigai¹, Hidenobu Gonda², Shinsuke Kunitsugu³ (1.Toyohashi Univ. Technol., 2.OSG Coating Service Co., Ltd., 3.Ind. Technol. Cent. Okayama Pref.)

4:00 PM - 4:15 PM

△ [24p-E204-10] Evaluation of Electrical Resistance of amorphous carbon films with Substrate Dependence Under Mechanical Pressure

〇(M2)Azmi Muhamad¹, Ayumu Takada¹, Ryuto Hirawata¹, Naoki Yasuno¹, Shuji Obata¹, Noboru Miyata², Miyazaki Tsukasa², Yasuharu Ohgoe¹ (1.Tokyo Denki University, 2.CROSS, Neutron Science and Technology)

Session information

[24p-E204-1~10] 6.2 Carbon-based thin films

[24p-E204-1] Chemical bonding state of DLC deposited by GCIB-assisted deposition

[24p-E204-2] Order of sp² hybridized carbons in amorphous carbon film

[24p-E204-3] Feature of DLC films sputtered by four targets facing sputtering cathode

[24p-E204-4] Deposition of hydrogen-free diamond-like carbon film on plastic substrate by high power pulse magnetron sputtering

[24p-E204-5] Development of a-C electrocatalysts for CO₂ reduction: controlling overpotential for H₂ evolution and surface structures

[24p-E204-6] Development of Si-added amorphous carbon thin films with controlling amorphous structure and establishment of its synthesis method for high efficiency multi-junction solar cells

△ [24p-E204-7] Preparation of SiCN Film by Reactive RF-UBMS with Nitrogen

[24p-E204-8] Formation of a-CNx:H thin films using microwave plasma CVD of the C₆H₆/N₂ gas mixture

△ [24p-E204-9] Ultra High-Rate Deposition and Film Quality Analysis of DLC Films Using Gas-Jet Plasma CVD Method with Ar/C₂H₂ Mixrd Gas

△ [24p-E204-10] Evaluation of Electrical Resistance of amorphous carbon films with Substrate Dependence Under Mechanical Pressure

Authenticate

Session information

[24p-E204-1~10] 6.2 Carbon-based thin films

[24p-E204-1] Chemical bonding state of DLC deposited by GCIB-assisted deposition

[24p-E204-2] Order of sp2 hybridized carbons in amorphous carbon film

[24p-E204-3] Feature of DLC films sputtered by four targets facing sputtering cathode

[24p-E204-4] Deposition of hydrogen-free diamond-like carbon film on plastic substrate by high power pulse magnetron sputtering

[24p-E204-5] Development of a-C electrocatalysts for CO2 reduction: controlling overpotential for H2 evolution and surface structures

[24p-E204-6] Development of Si-added amorphous carbon thin films with controlling amorphous structure and establishment of its synthesis method for high efficiency multi-junction solar cells

△ [24p-E204-7] Preparation of SiCN Film by Reactive RF-UBMS with Nitrogen

[24p-E204-8] Formation of a-CNx:H thin films using microwave plasma CVD of the C6H6/N2 gas mixture

△ [24p-E204-9] Ultra High-Rate Deposition and Film Quality Analysis of DLC Films Using Gas-Jet Plasma CVD Method with Ar/C2H2 Mixrd Gas

△ [24p-E204-10] Evaluation of Electrical Resistance of amorphous carbon films with Substrate Dependence Under Mechanical Pressure

Authenticate

[24p-E204-2] Order of sp² hybridized carbons in amorphous carbon film

[24p-E204-5] Development of a-C electrocatalysts for CO₂ reduction: controlling overpotential for H₂ evolution and surface structures

[24p-E204-8] Formation of a-CNx:H thin films using microwave plasma CVD of the C₆H₆/N₂ gas mixture

△ [24p-E204-9] Ultra High-Rate Deposition and Film Quality Analysis of DLC Films Using Gas-Jet Plasma CVD Method with Ar/C₂H₂ Mixrd Gas