[25a-E203-1~11] 15.4 III-V-group nitride crystals

Fri. Mar 25, 2022 9:00 AM - 12:00 PM E203 (E203)

Hiroto Sekiguchi(Toyohashi Univ. of Tech.), Momoko Deura(Univ. of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[25a-E203-1] Improvement of crystalline quality of AlN layers grown on c-plane sapphire substrate by MOVPE using post-growth annealing with TMGa

〇Masataka Imura¹, Hideki Inaba¹, Takaaki Mano¹, Nobuyuki Ishida¹, Fumihiko Uesugi¹, Yoko Kuroda¹, Yoshiko Nakayama¹, Masaki Takeguchi¹, Yasuo Koide¹ (1.NIMS)

9:15 AM - 9:30 AM

△ [25a-E203-2] The specific step bouncing in AlN by HT-MOVPE

〇(M1)Takumi Miyagawa¹, Shota Tsuda¹, Tomita Atsushi¹, Hideki Hirayama^2,3, Yuusuke Takashima¹, Yosiki Naoi^1,2, Kentaro Nagamatsu^1,2 (1.Tokushima Univ., 2.Tokushima Univ. pLED, 3.RIKEN)

9:30 AM - 9:45 AM

[25a-E203-3] Dependence of V/III ratio in high temperature AlN growth on low misorientation off-angle sapphire substrates

〇(B)Atsushi Tomita¹, Shota Tsuda¹, Takumi Miyagawa¹, Hideki Hirayama^2,3, Yuusuke Takashima^1,2, Yoshiki Naoi^1,2, Kentaro Nagamatsu^1,2 (1.Tokushima Univ., 2.Tokushima Univ. pLED., 3.RIKEN)

9:45 AM - 10:00 AM

[25a-E203-4] Effects of MOVPE Growth Temperature and Mesa Size on the Surface Morphologies of Step-Free AlN Films

〇(M1)Yuto Yamanaka¹, Kanako Shojiki¹, Shigeyuki Kuboya², Kenjiro Uesugi^2,3, Hideto Miyake^1,3 (1.Grad. Sch. of Eng. Mie Univ., 2.SPORR Mie Univ., 3.Grad. Sch. of RIS. Mie Univ.)

10:00 AM - 10:15 AM

[25a-E203-5] Highly conductive Mg-doped Al-rich AlGaN grown on AlN single crystal substrates

〇Shun Washiyama¹, GuoDong Hao¹, Tomonori Matsushita¹, Shin-ichiro Inoue¹ (1.NICT)

10:30 AM - 10:45 AM

[25a-E203-6] The sourse gas flow timing in the CVD of hexagonal boron nitride thin films

〇Riku Yoshioka¹, Yuki Tanaka¹, Taira Watanabe¹, Katsumi Masuda¹, Taiki Oishi¹, Kirari Masuda¹, Hiroko Kominami¹, Kazuhiko Hara^2,3 (1.GSIST Shizuoka Univ., 2.GSST Shizuoka Univ., 3.RIE Shizuoka. Univ)

10:45 AM - 11:00 AM

[25a-E203-7] Dependence of the flow rates of source materials on the low pressure CVD of hexagonal boron nitride thin films using a cold-wall reactor.

〇Katsumi Masuda¹, Taira Watanabe¹, Yuki Tanaka¹, Riku Yoshioka¹, Taiki Oishi¹, Kirari Masuda¹, Hiroko Kominami^1,2, Kazuhiko Hara^1,2,3 (1.GSIST Shizuoka Univ., 2.GSST Shizuoka Univ., 3.RIE Shizuoka Univ.)

11:00 AM - 11:15 AM

[25a-E203-8] Development of BGaN radiation detectors using BGaN composition graded layer

〇Tomoyuki Natsume¹, Atsuya Miyazawa¹, Daisuke Nakamura¹, Kosuke Hayashi¹, Yusaku Hashimoto¹, Seiya Kawasaki², Woong Kwon², Genichiro Wakabayashi³, Yoshio Honda⁴, Hiroshi Amano⁴, Yoku Inoue¹, Toru Aoki⁵, Takayuki Nakano^1,5 (1.Shizuoka Univ., 2.Nagoya Univ., 3.Kindai Univ., 4.IMaSS, Nagoya Univ., 5.R.I.E. Shizuoka Univ.)

11:15 AM - 11:30 AM

[25a-E203-9] Growth of AlInN films on a fully relaxed semipolar {11-22} GaInN

〇Takahiro Fujisawa¹, Taiki Nakabayashi¹, Takashi Egawa¹, Makoto Miyoshi¹, Tetsuya Takeuchi², Narihito Okada³, Kazuyuki Tadatomo³ (1.Nagoya Inst. Tech., 2.Meijo Univ., 3.Yamaguchi Univ.)

11:30 AM - 11:45 AM

△ [25a-E203-10] Hydrogen cleaning for high-quality conductive AlInN/GaN DBRs

〇Kana Shibata¹, Tetsuro Inagaki¹, Tsuyoshi Nagasawa¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ.)

11:45 AM - 12:00 PM

△ [25a-E203-11] In-situ reflectivity measurements of GaN-Based VCSEL

〇(M1)Tsuyoshi Nagasawa¹, Kana Shibata¹, Tetsuro Inagaki¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ.)

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