Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[25p-D114-1~16] 15.5 Group IV crystals and alloys

Fri. Mar 25, 2022 1:00 PM - 5:15 PM D114 (D114)

Keisuke Arimoto(Univ. of Yamanashi), Katsunori Makihara(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[25p-D114-1] [The 51st Young Scientist Presentation Award Speech] Growth of high quality Ge layers on Co₂FeSi and enhancement in room-temperature magnetoresistance ratios for Ge-based vertical spin devices

〇Atsuya Yamada¹, Michihiro Yamada², Shinya Yamada^3,1, Kentarou Sawano⁴, Kohei Hamaya^3,1 (1.Osaka Univ., 2.JST-PRESTO., 3.CSRN, Osaka Univ., 4.Tokyo City Univ.)

1:15 PM - 1:30 PM

[25p-D114-2] Control of Surface Morphology and Crystalline Phase of Ultra-thin NiGe Films on SiO₂

〇(M1)Shunsuke Nishimura¹, Noriyuki Taoka¹, Akio Ohta¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

1:30 PM - 1:45 PM

[25p-D114-3] Formation of single-crystalline germanane film with ultralow thermal conductivity

〇Yuto Uematsu¹, Tsukasa Terada¹, Takafumi Ishibe¹, Yoshiaki Nakamura¹ (1.Osaka Univ.)

1:45 PM - 2:00 PM

[25p-D114-4] Formation of CaGe₂ thin-films on high-resistivity Si(111) substrate

〇Kazuya Okada¹, Mai Itoh¹, Osamu Nakatsuka^1,2, Masashi Kurosawa¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

2:00 PM - 2:15 PM

△ [25p-D114-5] Self-organized formation of GeSn with ultra-high Sn content for realizing quantum dots

〇Kaoru Hashimoto¹, Shigehisa Shibayama¹, Koji Asaka¹, Osamu Nakatsuka^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

2:15 PM - 2:30 PM

[25p-D114-6] Solid Phase Epitaxy of P-doped Si_1-xSn_x Thin Films

〇(B)Tatsuki Oiwa¹, Masashi Kurosawa², Osamu Nakatsuka^2,3 (1.Sch. of Eng., Nagoya Univ., 2.Grad. Sch. of Eng., Nagoya Univ., 3.IMaSS, Nagoya Univ.)

2:30 PM - 2:45 PM

[25p-D114-7] Crystal growth of Si_1−xSn_x layers on Si_1−xGe_x buffers

〇(M1)Kazuaki Fujimoto¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

2:45 PM - 3:00 PM

[25p-D114-8] Evaluation of Anisotropic Biaxial Stress in Extremely-thin-body GOI p-type MOSFET by Oil-immersion Raman Spectroscopy

〇Ryo Yokogawa^1,2, Chia-Tsong Chen³, Kasidit Toprasertpong³, Mitsuru Takenaka³, Shinichi Takagi³, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.Univ. of Tokyo)

3:15 PM - 3:30 PM

[25p-D114-9] CVD growth of Ge epitaxial layer on patterned Si substrate

〇(M1)FAIZ FAIZ MOHD¹, Jose A. Piedra-Lorenzana¹, Takeshi Hizawa¹, Tetsuya Nakai², Yasuhiko Ishikawa¹ (1.Toyohashi Uni of Tech, 2.SUMCO)

3:30 PM - 3:45 PM

[25p-D114-10] Effect of lattice strain in Ge layer on Si by trench-filling growth

〇Kota Kato¹, Mohd Faiz Bin Amin¹, Piedra-Lorenzana Jose A.¹, Takeshi Hizawa¹, Tetsuya Nakai², Yasuhiko Ishikawa¹ (1.Toyohashi Univ., 2.SUMCO Corporation)

3:45 PM - 4:00 PM

[25p-D114-11] Strain Distribution of Carbon-doped Silicon Nanowire using X-ray Reciprocal Space Mapping

〇Ichiro Hirosawa^1,2, Kazutoshi Yoshioka³, Gai Ogasawara³, Kirito Cho³, Yuta Ito³, Sho Sugawa^1,3, Takeshi Watanabe⁴, Ryo Yokogawa^2,3, Atsushi Ogura^2,3 (1.SAGA-LS, 2.MREL, 3.Meiji Univ., 4.JASRI)

4:00 PM - 4:15 PM

[25p-D114-12] Inelastic X-ray scattering measurement on single crystalline GeSn thin film

〇Masato Chino¹, Ryo Yokogawa^2,3, Atsushi Ogura^2,3, Hiroshi Uchiyama⁴, Hirokazu Tatsuoka¹, Yosuke Shimura^1,5 (1.Shizuioka Univ., 2.Meiji Univ., 3.MREL, 4.JASRI, 5.Res. Inst. Electron.)

4:15 PM - 4:30 PM

△ [25p-D114-13] Evaluation of temperature variation in Debye-Waller factor of single crystal bulk SiGe by XAFS

〇Kazutoshi Yoshioka¹, Gai Ogasawara¹, Shusei Hanafusa¹, Yukihito Nishi¹, Yasutomo Arai², Ichiro Hirosawa³, Takeshi Watanabe⁴, Ryo Yokogawa^1,5, Atsushi Ogura^1,5 (1.Meiji Univ., 2.JAXA, 3.SAGA-LS, 4.JASRI, 5.MREL)

4:30 PM - 4:45 PM

[25p-D114-14] Near-infrared optical absorption in strained Ge layer on Si-on-quartz wafer

〇Mikiya Kuzutani¹, Takeshi Hizawa¹, Yasuhiko Ishikawa¹ (1.Toyohashi Univ. Tech.)

4:45 PM - 5:00 PM

△ [25p-D114-15] Investigation on Band Structure of Unstrained GeSn (Sn 9%) by PL Spectra Analyses

〇Yuta Satake¹, Shizuru Matsunaga¹, Gai Ogasawara¹, Yuta Ito¹, Ryo Yokogawa^1,2, Yosuke Shimura^3,4, Roger Loo⁵, Anurag Vohra^5,6, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.Shizuoka Univ., 4.RIE Shizuoka Univ., 5.imec, 6.K. U. Leuven)

5:00 PM - 5:15 PM

[25p-D114-16] Improvement of hole mobility and reduction of leakage current of strained Si / relaxed SiGe / Si(110) heterostructure p-MOSFET

〇Taisuke Fujisawa¹, Atsushi Onogawa¹, Miki Horiuchi¹, Chihiro Sakata¹, Junji Yamanaka¹, Kosuke Hara¹, Kentarou Sawano², Kiyokazu Nakagawa², Keisuke Arimoto¹ (1.Yamanashi Univ., 2.ARL Tokyo City Univ.)

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