[25p-E301-1~8] CS.9 Code-sharing Session of 13.7 & 15.6

Fri. Mar 25, 2022 1:00 PM - 3:15 PM E301 (E301)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[25p-E301-1] Atomic structure of steps on vicinal SiC(0001) surfaces

〇(PC)Kaori Seino^1,2, Atsushi Oshiyama¹ (1.Nagoya Univ., 2.Jena Univ.)

1:15 PM - 1:30 PM

[25p-E301-2] Relationship between polishing damage on 4H-SiC substrates and generation of step bunching during epitaxial growth

〇Keiko Masumoto¹, Junji Senzaki¹, Hiroshi Yamaguchi¹ (1.AIST)

1:30 PM - 1:45 PM

[25p-E301-3] Relationship between Crystalline Quality and Electric Properties in CVD-Grown Heavily Al-Doped p-Type 4H-SiC Epilayers with Al Concentration of First Half of 10²⁰cm^-3

〇(M2)Yuki Kondo¹, Atsuki Hidaka¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.OECU, 2.AIST)

1:45 PM - 2:00 PM

[25p-E301-4] Local electronic properties of n-type 4H-SiC crystal in contact with multilayer electrode film by micro-Raman spectroscopy at high temperatures

〇Seiya Kondo¹, Jun Suda¹ (1.Chukyo Univ.)

2:15 PM - 2:30 PM

[25p-E301-5] Nitrogen Doping for SiC Substrate by KrF Excimer Laser
Study of Laser Doping Mechanism (part 3)

〇Kaname Imokawa¹, Ryoichi Nohdomi¹, Yasutsugu Usami¹ (1.Gigaphoton Inc.)

2:30 PM - 2:45 PM

[25p-E301-6] Three-dimensional self-heating measurement of SiC Schottky barrier diode using optical-interference contactless thermometry (OICT)

〇Keiya Fujimoto¹, Hiroaki Hanafusa¹, Takuma Sato¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

2:45 PM - 3:00 PM

[25p-E301-7] Research on imaging technique for transient thermal diffusion processes in silicon wafers by Optical-Interference Contactless Thermometry (OICT)

〇(M1)Kotaro Matsuguchi¹, Keiya Fujimoto¹, Jiawen Yu¹, Hiroaki Hanafusa¹, Takuma Sato¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

3:00 PM - 3:15 PM

[25p-E301-8] [The 43rd JSAP Young Scientist Award Speech] Analyzing Variations of Blocking-Voltage and Capacitance for 4H-SiC Power Devices Toward Guarantee of Long-Term Reliability

〇Hiroyuki Matsushima^1,2, Yuki Mori¹, Aikio Shima¹, Noriyuki Iwamuro² (1.Hitachi, 2.Tsukuba Univ.)

Session information