Oral presentation

6 Thin Films and Surfaces » 6.1 Ferroelectric thin films

[25p-E305-1~18] 6.1 Ferroelectric thin films

Fri. Mar 25, 2022 1:30 PM - 6:30 PM E305 (E305)

Isaku Kanno(Kobe Univ.), Takeshi Kobayashi(AIST), Shinya Yoshida(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

△ [25p-E305-1] Ferroelectric properties of epitaxial (Al,Sc)N thin films grown on Nb:SrTiO₃ substrates

〇Kota Hasegawa^1,2, Takao Shimizu², Jun Chen², Takeo Ohsawa², Isao Sakaguchi^1,2, Naoki Ohashi^1,2,3 (1.Kyushu Univ., 2.NIMS, 3.Tokyo tech)

1:45 PM - 2:00 PM

△ [25p-E305-2] Ferroelectricity of (Al_1-xSc_x)N thin films with various electrodes

〇(M1)Reika Ota¹, Shinnosuke Yasuoka¹, Ryoichi Mizutani¹, Takahisa Shiraishi¹, Hiroshi Funakubo¹ (1.Tokyo Tech.)

2:00 PM - 2:15 PM

[25p-E305-3] The ferroelectric properties of (Al,Sc)N thin film controlled by in-plane orientation and thermal strain

〇(D)Shinnosuke Yasuoka¹, Ryoichi Mizutani¹, Reika Ota¹, Takahisa Shiraishi¹, Takao Shimizu^1,2,3, Masato Uehara⁴, Hiroshi Yamada⁴, Morito Akiyama⁴, Hiroshi Funakubo¹ (1.Tokyo Tech., 2.NIMS, 3.JST PREST, 4.AIST)

2:15 PM - 2:30 PM

△ [25p-E305-4] Enhancement of crystal anisotropy and ferroelectric property by decreasing thickness in (Al,Sc)N films

〇(D)Shinnosuke Yasuoka¹, Ryoichi Mizutani¹, Reika Ota¹, Takahisa Shiraishi¹, Takao Shimizu^1,2,3, Shintaro Yasui¹, Yoshitaka Ehara⁴, Ken Nishida⁴, Masato Uehara⁵, Hiroshi Yamada⁵, Morito Akiyama⁵, Yasuhiko Imai⁶, Osami Sakata⁶, Hiroshi Funakubo¹ (1.Tokyo Tech., 2.NIMS, 3.JST PREST, 4.NDA, 5.AIST, 6.JASRI)

2:30 PM - 2:45 PM

△ [25p-E305-5] Synthesis of ScAlN films for high-output piezoelectric vibration energy harvesters

〇Kyohei Shinzawa¹, Miki Sata¹, Haruna Furumaya¹, Futo Ouchi¹, Hung H. Nguyen², Hiroki Kuwano², Hiroyuki Oguchi¹ (1.Shibaura Tech., 2.Tohoku Univ. NICHe)

2:45 PM - 3:00 PM

△ [25p-E305-6] Growth of transparent ScAlN thin plate by sputtering method

〇Song Li^1,2, Naoya Iwata^1,2, Takahiko Yanagitani^1,2,3 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST)

3:15 PM - 3:30 PM

△ [25p-E305-7] Polaliztion of ScAlN piezoelectric film by external applying electric field

〇Naoki Ishii^1,2, Naoya Iwata^1,2, Yohkoh Shimano^1,2, Takahiko Yanagitani^1,2,3 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST)

3:30 PM - 3:45 PM

△ [25p-E305-8] Extraction of Q factor of piezoelectric thin film layer from piezoelectric thin film/substrate structure using high Q substrate

〇Shiori Kobayashi^1,2, Yuki Shimizu^1,2, Takahiko Yanagitani^1,2,3 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST)

3:45 PM - 4:00 PM

△ [25p-E305-9] BAW transmitter / receiver type transversal filter
using c-axis zigzag polarization inversion ScAlN thin film

〇(B)Saneyuki Shibata^1,2, Takahiko Yanagitani^1,2,3 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST)

4:00 PM - 4:15 PM

[25p-E305-10] Evaluation of stress distribution using piezoelectric matrix sensor

〇Ryogo Yokoyama¹, Takashi Nakajima¹ (1.Tokyo Univ of Sci.)

4:15 PM - 4:30 PM

[25p-E305-11] Development of ultra-thin Haptic MEMS device using PZT thin film

〇Toshihiro Takeshita¹, Vinh Nguyen Thanh¹, Daniel Zymelka¹, Yusuke Takei¹, Takeshi Kobayashi¹ (1.AIST)

4:30 PM - 4:45 PM

[25p-E305-12] Analysis of the Crosstalk Noise Between PZT Actuator and PZT Displacement Sensor

〇Yasuyuki Yamamoto¹, Sohei Matsumoto¹, Yuki Okamoto¹, Masaaki Ichiki¹, Takeshi Kobayashi¹ (1.AIST)

5:00 PM - 5:15 PM

△ [25p-E305-13] Epitaxial PbTiO3 array transducer for ultrasonic imaging using the reflectometry of back side of substrate in the giga-hertz range

〇(B)Yuna Koike^1,2, Yusuke Sato^1,2, Satoshi Matsumura^1,2, Takahiko Yanagitani^1,2,3 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST)

5:15 PM - 5:30 PM

△ [25p-E305-14] Fabrication of epitaxial piezoelectric layer on acoustic Bragg reflector

〇Satoshi Tokai^1,2, Kohei Ekida^1,2, Takahiko Yanagitani^1,2,3 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST)

5:30 PM - 5:45 PM

[25p-E305-15] Deposition of epitaxial sol-gel PZT thin film on Si substrate

〇Yuichi Kanayama¹, SangHyo Kweon¹, Goon Tan², Isaku Kanno¹ (1.Kobe Univ., 2.Osaka pref. Univ.)

5:45 PM - 6:00 PM

△ [25p-E305-16] Comparison of k_t² hysteresis curves for PbTiO₃ thin film resonators
before and after removing substrates

〇Sota Kuninobu^1,2, Naoya Iwata^1,2, Takahiko Yanagitani^1,2,3 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST)

6:00 PM - 6:15 PM

[25p-E305-17] Direct Patterning of Ferroelectric Materials by Proton Beam Writing

〇Jun Hirade¹, Misa Yamasaki¹, Masaki Yamaguchi¹, Hideo Kimura² (1.Shibaura Inst. of Tech., 2.Yantai Univ.)

6:15 PM - 6:30 PM

[25p-E305-18] Epitaxial growth technique for single-crystalline PbTiO₃ thin film on Si substrate using an HfO₂buffer layer

〇Hansol Park¹, Takeshi Kijima¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

Session information

[25p-E305-1~18] 6.1 Ferroelectric thin films

△ [25p-E305-1] Ferroelectric properties of epitaxial (Al,Sc)N thin films grown on Nb:SrTiO₃ substrates

△ [25p-E305-2] Ferroelectricity of (Al_1-xSc_x)N thin films with various electrodes

[25p-E305-3] The ferroelectric properties of (Al,Sc)N thin film controlled by in-plane orientation and thermal strain

△ [25p-E305-4] Enhancement of crystal anisotropy and ferroelectric property by decreasing thickness in (Al,Sc)N films

△ [25p-E305-5] Synthesis of ScAlN films for high-output piezoelectric vibration energy harvesters

△ [25p-E305-6] Growth of transparent ScAlN thin plate by sputtering method

△ [25p-E305-7] Polaliztion of ScAlN piezoelectric film by external applying electric field

△ [25p-E305-8] Extraction of Q factor of piezoelectric thin film layer from piezoelectric thin film/substrate structure using high Q substrate

△ [25p-E305-9] BAW transmitter / receiver type transversal filter
using c-axis zigzag polarization inversion ScAlN thin film

[25p-E305-10] Evaluation of stress distribution using piezoelectric matrix sensor

[25p-E305-11] Development of ultra-thin Haptic MEMS device using PZT thin film

[25p-E305-12] Analysis of the Crosstalk Noise Between PZT Actuator and PZT Displacement Sensor

△ [25p-E305-13] Epitaxial PbTiO3 array transducer for ultrasonic imaging using the reflectometry of back side of substrate in the giga-hertz range

△ [25p-E305-14] Fabrication of epitaxial piezoelectric layer on acoustic Bragg reflector

[25p-E305-15] Deposition of epitaxial sol-gel PZT thin film on Si substrate

△ [25p-E305-16] Comparison of k_t² hysteresis curves for PbTiO₃ thin film resonators
before and after removing substrates

[25p-E305-17] Direct Patterning of Ferroelectric Materials by Proton Beam Writing

[25p-E305-18] Epitaxial growth technique for single-crystalline PbTiO₃ thin film on Si substrate using an HfO₂buffer layer

Authenticate

Session information

[25p-E305-1~18] 6.1 Ferroelectric thin films

△ [25p-E305-1] Ferroelectric properties of epitaxial (Al,Sc)N thin films grown on Nb:SrTiO3 substrates

△ [25p-E305-2] Ferroelectricity of (Al1-xScx)N thin films with various electrodes

[25p-E305-3] The ferroelectric properties of (Al,Sc)N thin film controlled by in-plane orientation and thermal strain

△ [25p-E305-4] Enhancement of crystal anisotropy and ferroelectric property by decreasing thickness in (Al,Sc)N films

△ [25p-E305-5] Synthesis of ScAlN films for high-output piezoelectric vibration energy harvesters

△ [25p-E305-6] Growth of transparent ScAlN thin plate by sputtering method

△ [25p-E305-7] Polaliztion of ScAlN piezoelectric film by external applying electric field

△ [25p-E305-8] Extraction of Q factor of piezoelectric thin film layer from piezoelectric thin film/substrate structure using high Q substrate

△ [25p-E305-9] BAW transmitter / receiver type transversal filterusing c-axis zigzag polarization inversion ScAlN thin film

[25p-E305-10] Evaluation of stress distribution using piezoelectric matrix sensor

[25p-E305-11] Development of ultra-thin Haptic MEMS device using PZT thin film

[25p-E305-12] Analysis of the Crosstalk Noise Between PZT Actuator and PZT Displacement Sensor

△ [25p-E305-13] Epitaxial PbTiO3 array transducer for ultrasonic imaging using the reflectometry of back side of substrate in the giga-hertz range

△ [25p-E305-14] Fabrication of epitaxial piezoelectric layer on acoustic Bragg reflector

[25p-E305-15] Deposition of epitaxial sol-gel PZT thin film on Si substrate

△ [25p-E305-16] Comparison of kt2 hysteresis curves for PbTiO3 thin film resonatorsbefore and after removing substrates

[25p-E305-17] Direct Patterning of Ferroelectric Materials by Proton Beam Writing

[25p-E305-18] Epitaxial growth technique for single-crystalline PbTiO3 thin film on Si substrate using an HfO2 buffer layer

Authenticate

△ [25p-E305-1] Ferroelectric properties of epitaxial (Al,Sc)N thin films grown on Nb:SrTiO₃ substrates

△ [25p-E305-2] Ferroelectricity of (Al_1-xSc_x)N thin films with various electrodes

△ [25p-E305-9] BAW transmitter / receiver type transversal filter
using c-axis zigzag polarization inversion ScAlN thin film

△ [25p-E305-16] Comparison of k_t² hysteresis curves for PbTiO₃ thin film resonators
before and after removing substrates

[25p-E305-18] Epitaxial growth technique for single-crystalline PbTiO₃ thin film on Si substrate using an HfO₂buffer layer