Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[26p-E104-1~11] 15.7 Crystal characterization, impurities and crystal defects

Sat. Mar 26, 2022 1:30 PM - 4:30 PM E104 (E104)

Kazuhisa Torigoe(SUMCO), Takuo Sasaki(QST), Hiroyuki Tsubota(GlobalWafers Japan)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 1:45 PM

[26p-E104-1] Effects of Hydrogen Treatment on Piezoresistance Coefficients of Ge

〇Kazunori Matsuda¹, Masashi Yamamoto², Michio Mikawa², Shiro Nagaoka², Kouji Tanigawa¹, Takashi Kunimoto¹, Kazuo Tsutsui³ (1.Tokushima Bunri Univ., 2.NIT Kagawa, 3.Tokyo Inst. Tech.)

1:45 PM - 2:00 PM

[26p-E104-2] Influence of surface structure by carbon coating of high-dose implanted/annealed SiC

〇Kotaro Ishiji¹, Makoto Arita², Mariko Adachi³ (1.SAGA-LS, 2.Kyushu Univ., 3.Nanophoton)

2:00 PM - 2:15 PM

[26p-E104-3] Characterization of surface carrier recombination lifetime of GaAs (110) using time-resolved two-photon photoemission spectroscopy

〇Shuhei Ichikawa^1,2, Kazunobu Kojima¹ (1.Osaka Univ., 2.Research Center for UHVEM, Osaka Univ.)

2:15 PM - 2:30 PM

[26p-E104-4] Analysis of μ-PCD Decay Curve Considering Surface Recombination

〇Shuto Fumoto¹, Noritomo Mitsugi¹, Shuichi Samata¹ (1.SUMCO Corporation)

2:45 PM - 3:00 PM

[26p-E104-5] Product Design of Silicon Wafers for 3D Stacked CMOS Image Sensor (I)
-Reduction of SiO₂/Si Interface State using CH₃O-Molecular-Ion-Implanted Wafers-

〇Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Akihiro Suzuki¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

3:00 PM - 3:15 PM

[26p-E104-6] Product Design of Silicon Wafers for 3D Stacked CMOS Image Sensor (II)
– Photoemission Spectroscopy Study on Variation in SiO₂/Si Interfacial Strain with Annihilation of Interface State Defects –

〇Akihiro Suzuki¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Koji Kobayashi¹, Ryo Hirose¹, Ayumi Masada¹, Yoshihiro Koga¹, Kazutoshi Takahashi², Kazunari Kurita¹ (1.SUMCO CORPORATION, 2.Synchrotron Light Application Center, Saga Univ.)

3:15 PM - 3:30 PM

[26p-E104-7] Product Design of Silicon Wafers for 3D Stacked CMOS Image Sensor (III)
–Analysis of Recrystallization Behavior of Hydrocarbon Molecular Ion Implanted Si wafer Surface Using X-ray Photoelectron Spectroscopy–

〇kouji kobayashi¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Ryo Hirose¹, Akihiro Suzuki¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

3:30 PM - 3:45 PM

[26p-E104-8] Product Design of Silicon Wafers for 3D Stacked CMOS Image Sensor (Ⅳ)
– Effect of carbon on gettering capability in Si-based molecular ion implantation –

〇Ryo Hirose¹, Takeshi Kadono¹, Ayumi Onaka-Masada¹, Ryosuke Okuyama¹, Koji Kobayashi¹, Akihiro Suzuki¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

3:45 PM - 4:00 PM

[26p-E104-9] Quality of silicon substrate and point defects
(7) Six fundamental equation sets for understanding and control of defects

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ. Radiation Research Center)

4:00 PM - 4:15 PM

[26p-E104-10] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal
(20) Database of local vibration modes of N-complexes

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ. Radiation Research Center)

4:15 PM - 4:30 PM

[26p-E104-11] Measurement of carbon concentration in silicon crystal
(24) Infrared absorption measurement using the internet and template

〇Naohisa Inoue¹, Shuichi Okuda¹, Shuichi Kawamata¹ (1.Osaka Pref. Univ. Radiation Research Center)

Session information