Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[26p-E203-1~10] 15.4 III-V-group nitride crystals

Sat. Mar 26, 2022 2:15 PM - 5:15 PM E203 (E203)

Motoaki Iwaya(Meijo Univ.), Ryuji Katayama(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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2:15 PM - 2:45 PM

[26p-E203-1] [The 43rd JSAP Paper Award Speech] Development of AlGaN UV-B LD and realization of room temperature pulse operation

〇Kosuke Sato^1,2, Shinji Yasue², Shunya Tanaka², Tomoya Omori², Kazuki Yamada², Sayaka Ishizuka², Shohei Teramura², Yuya Ogino², Sho Iwayama^2,3, Motoaki Iwaya², Hideto Miyake³, Tetsuya Takeuchi², Satoshi Kamiyama² (1.Asahi Kasei, 2.Meijo Univ., 3.Mie Univ.)

2:45 PM - 3:00 PM

△ [26p-E203-2] Reduction of dislocation density in Al_0.6Ga_0.4N grown on periodic concavo-convex AlN patterns

〇(B)Eri Matsubara¹, Tomoya Omori¹, Kazuki Yamada¹, Ryota Hasegawa¹, Ayumu Yabutani¹, Ryosuke Kondo¹, Sho Iwayama^1,2, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ.)

3:00 PM - 3:15 PM

△ [26p-E203-3] Dependence of threshold power density on AlGaN underlying layer for AlGaN-based optical-pumped UV-B lasers

〇(M1)Ryota Hasegawa¹, Shuya Tanaka¹, Tomoya Omori¹, Kazuki Yamada¹, Ayumu Yabutani¹, Ryosuke Kondo¹, Eri Matsubara¹, Sho Iwayama^1,2, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ)

3:15 PM - 3:30 PM

△ [26p-E203-4] Improvement of performance for UV-B laser diodes by using high reflectivity dielectric multilayer reflector

〇(M1)Ayumu Yabutani¹, Tomoya Omori¹, Kazuki Yamada¹, Ryota Hasegawa¹, Sho Iwayama¹, Yoshito Jin³, Tatsuya Matsumoto³, Masamitsu Toramaru³, Hironori Torii⁴, Hayata Toyoda¹, Daichi Imai¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ., 3.JSW, 4.JSW Afty)

3:30 PM - 3:45 PM

△ [26p-E203-5] Performances of AlGaN-based UV-B laser diode fabricated on periodic concavo-convex AlN patterns

〇(B)Ryosuke Kondo¹, Tomoya Omori¹, Kazuki Yamada¹, Ryota Hasegawa¹, Ayumu Yabutani¹, Eri Matsubara¹, Sho Iwayama^1,2, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, HIdeto Miyake² (1.Meijo Univ., 2.Mie Univ.)

4:00 PM - 4:15 PM

△ [26p-E203-6] Fabrication of HfO₂/AlN Transverse Quasi-Phase-Matched Channel Waveguide for 230-nm Far-UV Second Harmonic Generation

〇Hiroto Honda¹, Yuya Tawara¹, Yasufumi Fujiwara¹, Kanako Shojiki^1,2, Hideto Miyake^2,3, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ., 2.Mie Univ., 3.Regional Innovation Studies, Mie Univ.)

4:15 PM - 4:30 PM

[26p-E203-7] Fabrication and evaluation of rib-waveguide wavelength conversion devices using GaN-QPM crystals

〇Keiya Shimada¹, Hiroki Ishihara², Soshi Umeda³, Naoki Yokoyama³, Hiroto Honda³, Yoku Inoue², Masahiro Uemukai³, Tomoyuki Tanikawa³, Ryuji Katayama³, Takayuki Nakano^2,4 (1.Fac. Eng. Shizuoka Univ., 2.Grad. Sci. & Technol. Shizuoka Univ., 3.Osaka Univ., 4.R.I.E. Shizuoka Univ.)

4:30 PM - 4:45 PM

[26p-E203-8] Design of phase-matched SHG based on AlGaN waveguides with Bragg-reflection cladding layers

〇Tomonori Matsushita¹, Shin-ichiro Inoue¹ (1.NICT)

4:45 PM - 5:00 PM

[26p-E203-9] Fabrication of 280nm LD structures using polarization doped p-type layers and observation of high current injection emission

〇(B)Fumiya Chugenji^1,3, Noritoshi Maeda¹, Yuri Itokazu^1,3, M. Ajmal Khan¹, Yasushi Iwaisako², Hiroyuki Yaguchi³, Hideki Hirayama¹ (1.RIKEN, 2.Nippon Tungsten Co., 3.Saitama Univ.)

5:00 PM - 5:15 PM

[26p-E203-10] Wavelength dependence of net modal gain of AlGaN-based DUV laser diode

〇Yuri Itokazu^1,2, Noritoshi Maeda¹, Hiroyuki Yaguchi², Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ.)

Session information

[26p-E203-1~10] 15.4 III-V-group nitride crystals

[26p-E203-1] [The 43rd JSAP Paper Award Speech] Development of AlGaN UV-B LD and realization of room temperature pulse operation

△ [26p-E203-2] Reduction of dislocation density in Al_0.6Ga_0.4N grown on periodic concavo-convex AlN patterns

△ [26p-E203-3] Dependence of threshold power density on AlGaN underlying layer for AlGaN-based optical-pumped UV-B lasers

△ [26p-E203-4] Improvement of performance for UV-B laser diodes by using high reflectivity dielectric multilayer reflector

△ [26p-E203-5] Performances of AlGaN-based UV-B laser diode fabricated on periodic concavo-convex AlN patterns

△ [26p-E203-6] Fabrication of HfO₂/AlN Transverse Quasi-Phase-Matched Channel Waveguide for 230-nm Far-UV Second Harmonic Generation

[26p-E203-7] Fabrication and evaluation of rib-waveguide wavelength conversion devices using GaN-QPM crystals

[26p-E203-8] Design of phase-matched SHG based on AlGaN waveguides with Bragg-reflection cladding layers

[26p-E203-9] Fabrication of 280nm LD structures using polarization doped p-type layers and observation of high current injection emission

[26p-E203-10] Wavelength dependence of net modal gain of AlGaN-based DUV laser diode

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Session information

[26p-E203-1~10] 15.4 III-V-group nitride crystals

[26p-E203-1] [The 43rd JSAP Paper Award Speech] Development of AlGaN UV-B LD and realization of room temperature pulse operation

△ [26p-E203-2] Reduction of dislocation density in Al0.6Ga0.4N grown on periodic concavo-convex AlN patterns

△ [26p-E203-3] Dependence of threshold power density on AlGaN underlying layer for AlGaN-based optical-pumped UV-B lasers

△ [26p-E203-4] Improvement of performance for UV-B laser diodes by using high reflectivity dielectric multilayer reflector

△ [26p-E203-5] Performances of AlGaN-based UV-B laser diode fabricated on periodic concavo-convex AlN patterns

△ [26p-E203-6] Fabrication of HfO2/AlN Transverse Quasi-Phase-Matched Channel Waveguide for 230-nm Far-UV Second Harmonic Generation

[26p-E203-7] Fabrication and evaluation of rib-waveguide wavelength conversion devices using GaN-QPM crystals

[26p-E203-8] Design of phase-matched SHG based on AlGaN waveguides with Bragg-reflection cladding layers

[26p-E203-9] Fabrication of 280nm LD structures using polarization doped p-type layers and observation of high current injection emission

[26p-E203-10] Wavelength dependence of net modal gain of AlGaN-based DUV laser diode

Authenticate

△ [26p-E203-2] Reduction of dislocation density in Al_0.6Ga_0.4N grown on periodic concavo-convex AlN patterns

△ [26p-E203-6] Fabrication of HfO₂/AlN Transverse Quasi-Phase-Matched Channel Waveguide for 230-nm Far-UV Second Harmonic Generation