[22a-D214-1~7] 9.5 New functional materials and new phenomena

[22a-D214-5] Pt removal process of Pt-capped YbH₂ films and optical properties of the films after removal

〇Osamu Nakamura¹, Mitufumi Kurita¹, Masamichi Sakai², Toshihiro Yoshizumi², Tatsuro Hanajiri³ (1.Okayama Univ. of Science, 2.Saitama Univ., 3.Toyo Univ.)

Keywords:semiconductor, 4f electronic system, Yb Hydride

The Pt-capped Yb film was treated in a hydrogen atmosphere to produce a semiconducting YbH₂film, the Pt was removed by a simple method, and its optical properties were evaluated. As a result, the band gap was found to be 1.46 eV and the transition type was similar to that of indirect and amorphous semiconductors.