[22a-E105-1~7] 13.1 Si系基礎物性・表面界面・シミュレーション

▲ [22a-E105-5] Evaluation of random telegraph noise in Hf-based MONOS nonvolatile memory with HfO₂ and HfON tunneling layer

〇(DC)Jooyoung Pyo¹、Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

キーワード：Random telegraph noise, MONOS non-volatile memory, Hf-based material

Previously, we have investigated Hf-based metal/oxide/nitride/oxide/silicon (MONOS) non-volatile memory (NVM) with HfON tunneling layer (TL) to decrease the equivalent oxide thickness (EOT) and improve the memory characteristics compared to that of MONOs with HfO₂ TL. However, the MONOS with HfON TL shows higher density of interface states (D_it) than that of MONOS with HfO₂ TL.
In this research, the random telegraph noise (RTN) characteristics were evaluated to investigate the interface characteristics of Hf-based MONOS NVM with HfO₂ and HfON TL according to the channel length (L) and width (W).