[22a-E202-1~7] 15.4 III-V-group nitride crystals

[22a-E202-7] HVPE growth of AlGaN crystals

〇Hajime Fujikura¹, Taichiro Konno¹, Takeshi Kimura¹ (1.SCIOCS Co. Ltd.)

Keywords:HVPE, AlGaN

In this study, HVPE-growth conditions for growing AlGaN layers with smooth surfaces have been established by suppressing a vapor phase reaction thorough optimization of the HVPE-reactor configuration and growth conditions.