[22a-E204-1~9] 6.3 Oxide electronics

△ [22a-E204-3] Bandwidth control and effective-mass divergence in SrVO₃ films by epitaxial strain

〇(B)Mashiro Ogawa¹, Takuto Soma¹, Akira Ohtomo^1,2 (1.Tokyo Tech., 2.MCES.)

Keywords:epitaxial strain, SrVO3, strongly correlated electron system

SrVO₃ is a strongly correlated transition metal oxide with 3d electron system, which transitions from metal to Mott insulator by bandwidth control.
The effect on the electron correlation by bandwidth control is still controversial, and the effective mass divergence suggesting the Mott transition has not been observed.
In this study, SrVO₃ thin films were grown on various substrates, and we report that SrVO₃ films approached to the Mott transition and the effective mass increased by epitaxial strain.