[22a-E303-1~9] 3.15 シリコンフォトニクス・集積フォトニクス

▼ [22a-E303-7] Transfer printing of a 1.9-millimeter-long quantum dot laser on a silicon substrate

〇(P)Natalia Morais¹、Jinkwan Kwoen¹、Yasutomo Ota^1,2、Yasuhiko Arakawa¹ (1.NanoQuine Tokyo Univ、2.Keio University)

キーワード：heterogeneous integration, quantum dot laser, silicon

We report the transfer printing of a 1.9 mm long InAs/GaAs QD laser over SiO₂ on a Si substrate. The lasers are fabricated on a GaAs substrate by adhesive bonding an InAs/GaAs QD wafer and a commercial GaAs substrate using Fox-15. After curing, the Fox-15 layer can be used as a sacrificial layer. After patterning the QD lasers with standard lithography processes, they are encapsulated with photoresist for etching the sacrificial layer with vapor HF, which permits their release from the GaAs substrate. The lasers are picked up by a PDMS stamp and placed on the Si substrate. We slide the Si substrate horizontally with respect to the stamp to release it. This technique increases the success rate for transfer printing millimeter long devices. For a pulsed operation at room temperature, we observed 82 mA threshold current and 1259 nm lasing wavelength.