[22a-F308-1~10] 2.1 Detection Devices

[22a-F308-5] Temperature tolerance of group-III nitride semiconductor detector

〇Kosuke Hayashi¹, Hisaya Nakagawa², Seiya Kawasaki³, Manato Deki⁴, Yoshio Honda⁴, Hiroshi Amano⁴, Yoku Inoue¹, Toru Aoki², Takayuki Nakano^1,2 (1.Shizuoka Univ., 2.R.I.E Shizuoka Univ., 3.Nagoya Univ., 4.IMass Nagoya Univ.)

Keywords:GaN, semiconductor detector, radiation detector