[22p-D316-1~16] 13.8 光物性・発光デバイス

▼ [22p-D316-10] Photoluminescence enhancement of InAs surface quantum dots by Al₂O₃ passivation

〇(DC)Hanif Mohammadi¹、Ronel Roca¹、Yuwei Zhang¹、Hyunju Lee¹、Naotaka Iwata¹、Yoshio Ohshita¹、Itaru Kamiya¹ (1.Toyota tech. inst.)

キーワード：Surface quantum dots, Passivation, Ligand exchange

Recently, In(Ga)As surface quantum dots (SQDs) have attracted attention for optoelectronic applications taking advantage of their proximity to the surface and long emission wavelength. However, due to the presence of surface trap sites, in form of native surface oxides and surface states, SQDs suffer carrier entrapment. Here, for the first time, we show strong photoluminescence (PL) enhancement of molecular beam epitaxy (MBE) grown InAs SQDs through ex situ plasma-enhanced atomic layer deposition (PE-ALD) Al₂O₃ passivation capping.