Growth of tunnel junction on m-plane GaN substrate for its introduction to multi-quantum shell devices, ver.2

Shiori Yamamura, Yoshiya Miyamoto, Weifang Lu, Renji Okuda, Kazuma Ito, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, Mizuki Takahashi, Yuki Yamanaka, Ayaka Shima, Shiori Ii, Soma Inaba, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[22p-E202-1~16] 15.4 III-V-group nitride crystals

Tue. Mar 22, 2022 1:30 PM - 6:15 PM E202 (E202)

Atsushi Kobayashi(Univ. of Tokyo), Kanako Shojiki(Mie Univ.), Kenjiro Uesugi(Mie Univ.)

4:45 PM - 5:00 PM

△ [22p-E202-11] Growth of tunnel junction on m-plane GaN substrate for its introduction to multi-quantum shell devices, ver.2

〇Shiori Yamamura¹, Yoshiya Miyamoto¹, Weifang Lu¹, Renji Okuda¹, Kazuma Ito¹, Yukimi Jinno¹, Nanami Nakayama¹, Sae Katsuro¹, Mizuki Takahashi¹, Yuki Yamanaka¹, Ayaka Shima¹, Shiori Ii¹, Soma Inaba¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹ (1.Meijo University)

Keywords:MOVPE, m-plane GaN substrate, Tunnel junction