[22p-E202-1~16] 15.4 III-V-group nitride crystals

△ [22p-E202-14] Demonstration of high-Q (>10,000) III-nitride-based photonic crystal cavities in the red region

〇Takenori Iwaya¹, Shuhei Ichikawa^1,2, Dolf Timmerman¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ., 2.Research Center for UHVEM, Osaka Univ.)

Keywords:photonic crystal nanocavity, III-nitride semiconductor, GaN:Eu

III-nitride-based two-dimensional photonic crystal cavities have wide potential applications, such as quantum information technologies and low threshold laser, however, high-Q-factors have not achieved yet. Previously, we utilized a H3 cavity and reported a high-Q-factor of 7900, which is the maximum value among the existing reports. In this study, we designed and fabricated a cavity with a two-dimensional heterostructure and achieved a higher Q-factor over 10,000.