[22p-E202-1~16] 15.4 III-V-group nitride crystals

[22p-E202-15] Near Infrared Luminescence Properties of Nd-doped GaN Photonic Crystal L3 Cavity

〇Shinichiro Sato¹, Takao Oto², Takeshi Ohshima¹ (1.QST, 2.Yamagata Univ.)

Keywords:Photonic crystal, Rare-earth doping, Photoluminescence

Development of reliable single photon source, which emits single photons on demand, is crucial for realization of quantum cryptography/communication. Neodymium (Nd) doped gallium nitride (GaN) is one promising candidate for room-temperature operating electrically driven near infrared single photon source, although the spontaneous emission rate of single Nd ions has to be enhanced for its realization. We report the emission rate enhancement of Nd-4f transition luminescence due to the Purcell effect in Nd-implanted GaN photonic crystal L3 cavity.