The 69th JSAP Spring Meeting 2022

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[22p-E202-1~16] 15.4 III-V-group nitride crystals

Tue. Mar 22, 2022 1:30 PM - 6:15 PM E202 (E202)

Atsushi Kobayashi(Univ. of Tokyo), Kanako Shojiki(Mie Univ.), Kenjiro Uesugi(Mie Univ.)

4:00 PM - 4:15 PM

[22p-E202-9] Vertical p-type GaN SBDs with a large barrier

〇Kohei Aoyama1, Kohei Ueno1, Atsushi Kobayashi1, Hiroshi Fujioka1 (1.Institute of Industrial Science, Tokyo Univ.)

Keywords:GaN, Sputtering, Schottky barrier diode