The 69th JSAP Spring Meeting 2022

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[22p-E204-1~13] 6.3 Oxide electronics

Tue. Mar 22, 2022 1:30 PM - 5:00 PM E204 (E204)

Takahisa Tanaka(Univ. Tokyo), Daichi Oka(Tohoku Univ. )

3:45 PM - 4:00 PM

[22p-E204-9] Reversible rapid protonation of WO3 films in non-acid solution

〇Zhiping Bian1, Jiangtao Zhao1, Heng Cao1, Yongqi Dong1,2, Zhenlin Luo1 (1.NSRL, USTC, 2.SIAT, CAS)

Keywords:protonation, non-acid, WO3

Protonation, an effective way to tune the properties of transition metal oxide (TMO) thin films, has been long-awaited to be performed safely and without external energy input. Recently, metal-acid-TMO has been reported to be an effective approach for protonation, but the requirement of acid limits its application.[1-3] In this work, the reversible and rapid protonation of WO3 in NaOH (aq.) | Al (s) | WO3 (s) is revealed by structural and electrical measurements.[4] Accompanied by the structural phase transition identified by in-situ X-ray diffraction measurements, the electrical resistance of the WO3 film is found to be able to change by five orders of magnitude. A significant electrical response of touching, 8-fold in amplitude and 3 seconds in a cycle, can be achieved in the low resistance state. These reactions are reversible at room temperature. This study unambiguously proves that the protonation-driven dynamic phase transition of WO3 in metal-solution-WO3 systems could occur not only in acid solutions but also in some non-acid environments. Unlike the monotonic increase of resistance revealed during HδWO3 to WO3 transition, an intriguing non-monotonic evolution was found for crystal lattice parameter c, indicating that the mechanism of WO3 protonation involves a series of metastable states, more comprehensive and reasonable. This work sheds light on the potential applications of metal-solution-TMO protonation in touching sensors, circuits survey and information storage.
[1] Y. Chen et al., Nat. Commun. 9, 818 (2018).
[2] L. Xie et al., J. Am. Chem. Soc. 142, 4136-4140 (2020).
[3] X. Yao et al., Nat. Commun. 11, 3134 (2020).
[4] Z. Bian et al., ACS Appl. Mater. Interfaces 13, 13419 (2021).