2:45 PM - 3:15 PM
[22p-E302-3] [The 43rd Best Review Paper Award Speech] Defect Engineering in SiC Technology for High-voltage Power Devices
Keywords:silicon carbide, power device, MOS device
Oral presentation
CS Code-sharing session » 【CS.9】 Code-sharing Session of 13.7 & 15.6
Tue. Mar 22, 2022 1:45 PM - 6:30 PM E302 (E302)
Yasunori Tanaka(AIST), Manabu Arai(Nagoya Univ.)
2:45 PM - 3:15 PM
Keywords:silicon carbide, power device, MOS device