[22p-F308-1~13] 2.1 Detection Devices

[22p-F308-6] Fabrication of novel BGaN devices for high temperature tolerance neutron semiconductor detectors

〇Daisuke Nakamura¹, Shun Nishikawa¹, Ryoya Ozeki¹, Kosuke Hayashi¹, Seiya Kawasaki², Woong Kwon², Genichiro Wakabayashi³, Yosio Honda⁴, Hiroshi Amano⁴, Yoku Inoue¹, Toru Aoki⁵, Takayuki Nakano^1,5 (1.Shizuoka Univ., 2.Nagoya Univ., 3.Kindai Univ., 4.IMaSS Nagoya Univ., 5.R.I.E. Shizuoka Univ.)

Keywords:GaN, radiation detector, semiconductor detector