[22p-P02-1~3] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[22p-P02-1] Evaluation of valence band difference (ΔE_V) at Si/CaF₂ interface using p-type single barrier tunneling diodes and double barrier resonant tunneling diodes

〇(M2)Daiki Sugawara¹, Liu Long¹, Gensai Tei¹, Yohei Koyanagi¹, Kenta Kitamura¹, Masahiro Watanabe¹ (1.Tokyo Tech)

Keywords:resonant tunneling diode, Calcium fluoride

In the structure in which the Si thin film is sandwiched between CaF₂ barriers, quantum confinement and resonance tunneling effects are exhibited at room temperature. In order to apply this to the control of photoelectron interaction, this time, the IV characteristics of the Si/CaF₂ p-type single barrier tunnel diode are fitted in consideration of the effects of leakage current and parasitic resistance, and the valence band band discontinuity is estimated. In addition, the validity of the barrier heights are verified from the I-V peak position of the double barrier resonant tunneling diode.