The 69th JSAP Spring Meeting 2022

Presentation information

Poster presentation

17 Nanocarbon Technology » 17 Nanocarbon Technology(Poster)

[22p-P06-1~23] 17 Nanocarbon Technology(Poster)

Tue. Mar 22, 2022 4:00 PM - 6:00 PM P06 (Poster)

4:00 PM - 6:00 PM

[22p-P06-4] Inkjet printing of carbon nanotube arrays at low density for CMOS-compatible fabrication of nanoscale transistors

〇(DC)Rohitkumar Singh1, Katsuyuki Takagi1, Toru Aoki1, Jonghyun Moon1, Yoichiro Neo1, Daniel Moraru1, Hidenori Mimura1 (1.Shizuoka Univ.)

Keywords:Semiconductor, Carbon Nanotube, Inkjet Printing

Continuous miniaturization of electronics brings the dimensions of the key devices, Si transistors, well into the nanoscale. There are several challenges emerging at these scales due to random dopant distribution, leakage currents or uncontrollable fabrication. Carbon nanotubes (CNTs), such as single-wall CNTs, have been widely explored as an alternative for future organic electronics, specifically because of their outstanding transport properties, nanoscale dimensions and flexibility. By implementing suitable fabrication techniques, SW-CNTs can be also regarded as suitable transport channels on CMOS-compatible platforms.
CNTs are generally grown or deposited by solution processing, by approaches that do not allow a suitable control of CNT density and/or local positioning. Further manipulation of CNTs is required to achieve more controlled distributions that can be used for device fabrication. Here, we further explore a pathway of using inkjet printing technology for locally depositing low-density SW-CNT arrays, aiming to design CMOS-compatible CNT-devices.
As a first stage for inkjet printing, we optimized the homogeneity and dispersion conditions of SW-CNTs from dimethylformamide (DMF) solutions. It is known that obtaining a stable solution for a suitable dispersion is critical, since the van der Waals attractive forces between the CNTs can lead to the formation of nano-bundles, ropes, or agglomerates. By long-time sonication, a good homogeneity of the solution was achieved, and conditions for drying on the Si/SiO2 surfaces, as well as Al surfaces, have also been analyzed.