9:30 AM - 9:45 AM
△ [23a-D315-3] High Speed 3D Measurement of Defects in Wide Bandgap Semiconductors using Light Needle Microscopy
Keywords:3D imaging, Bessel beam, Airy beam
In this session, we present a new method for fast and three-dimensional measurement of dislocations in wide bandgap semiconductors using multiphoton excited photoluminescence. The method is based on the principle of simultaneous excitation in the depth direction using a long focal depth Bessel beam and depth information reconstruction using a self-bending Airy beam. As a result of applying this method to the observation of GaN, we succeeded in obtaining 3D depth images from only a single 2D scan.