[23a-E101-1~11] 17.3 Layered materials

[23a-E101-1] [The 51st Young Scientist Presentation Award Speech] Physical origin of the ultrafast nature in 2D heterostructured memory devices

〇Taro Sasaki¹, Keiji Ueno², Takashi Taniguchi³, Kenji Watanabe³, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.The Univ. of Tokyo, 2.Saitama Univ., 3.NIMS)

Keywords:2D materials, memory, dielectric breakdown