[23a-E101-1~11] 17.3 Layered materials

▼ [23a-E101-6] Carrier transport in 2D WS2-xSex FETs

〇(D)Abdul A Kuddus¹, Rytaro Kizaki¹, Kojun Yokoyama¹, Hajime Shirai¹ (1.Saitama University)

Keywords:Carrier transport, MOSFETs, 2D WS2-xSex

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) such as MoS2 and WSe2 have been extensively studied with an ever-growing interest due to their superior transport properties for ultimate device scaling for the past few decades [1,2]. In this study, we report the carrier transport property of lateral WS2-xSex/WO3-x p-n junction formed between S/D electrodes in the dark and under light exposure using the field-effect transistors (FETs) structure. The Isd in the negative Vg regions for the plasma exposed FETs was increased by ~1.5 times with a slight decrease in the positive Vg regions compared to that of as-deposited FET. This is due to the hole injection from the top oxidized WO3-x to underneath WS2-xSex layer.In addition, the Isd was suppressed relatively to be lower for V of -1.5~1.5 V region due to the space charge in the depletion region for lateral WS2-xSex/WO3-x p-n junction. The photocurrent exposure to the S/D electrodes in the LEDs light exposure and the AM1.5G simulated solar light exposure in the entire device region showed a photovoltaic behavior of ~ 1V in the forward V region as is similar to that of solar cells.