[23a-E101-1~11] 17.3 Layered materials

△ [23a-E101-8] Fabrication and electronic transport properties of multilayer Nb_xMo_1-xS₂/MoS₂ in-plane heterostructures

〇(DC)Hiroto Ogura¹, Seiya Kawasaki¹, Zheng Liu², Takahiko Endo¹, Yusuke Nakanishi¹, Hong En Lim¹, Toshifumi Irisawa², Kosuke Nagashio³, Yasumitsu Miyata¹ (1.TMU, 2.AIST, 3.The Univ. of Tokyo)

Keywords:Transition metal dichalcogenides, Tunnel diode, Tunneling field-effect transistors