[23a-E102-1~8] FS.1 Focused Session "AI Electronics"

[23a-E102-4] Optimization of RF frequencies for dual-frequency plasma using genetic algorithm (GA) and plasma simulation

〇Shigeyuki Takagi¹, Tatsuhiro Nakaegawa¹, Shih-nan Hsiao², Makoto Sekine² (1.TUT Univ., 2.Nagoya Univ.)

Keywords:dual-frequency, plasms simulation, genetic algorithm

In the etching process of semiconductors, dual-frequency excited plasma is used to control the processing shape. It is desired that the high electron density is high on the high frequency side and the density fluctuation is small on the low frequency side. As a result of optimizing the frequencies of the upper and lower electrodes, the electron density was maximum at 175 MHz for the upper electrode, and the density change was minimum at 1 to 1.5 MHz for the lower electrode.