[23a-E202-1~10] 15.4 III-V-group nitride crystals

[23a-E202-6] [The 43rd JSAP Young Scientist Award Speech] In-Rich InGaN Light Emitters Grown on ScAlMgO₄ Substrates

〇Takuya Ozaki¹, Mitsuru Funato², Yoichi Kawakami² (1.Nichia Corp., 2.Kyoto Univ.)

Keywords:ScAlMgO4, In-rich InGaN

The epitaxial growth of nitride semiconductors on ScAlMgO4 substrates has been investigated in this study for the purpose of improving the emission efficiency in a longer-wavelength visible range. The a lattice constant of ScAlMgO4 is expected to match that of InGaN with the In composition of nearly 17%, which leads to the strain reduction in the In-rich InGaN active layer. The lattice-matched InGaN template followed by In-rich InGaN quantum wells grown on this substrate is demonstrated and shows better optical performance in green to red spectral region than conventional structures based on GaN/sapphire templates.